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UCC27423DRG4 PDF预览

UCC27423DRG4

更新时间: 2024-02-17 06:44:04
品牌 Logo 应用领域
德州仪器 - TI 驱动器
页数 文件大小 规格书
30页 1460K
描述
Dual 4-A High Speed Low-Side MOSFET Drivers With Enable

UCC27423DRG4 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SOIC包装说明:SOP, SOP8,.25
针数:8Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.39.00.01
风险等级:5.18高边驱动器:NO
输入特性:STANDARD接口集成电路类型:BUFFER OR INVERTER BASED MOSFET DRIVER
JESD-30 代码:R-PDSO-G8JESD-609代码:e4
长度:4.9 mm湿度敏感等级:1
功能数量:2端子数量:8
最高工作温度:105 °C最低工作温度:-40 °C
输出特性:TOTEM-POLE标称输出峰值电流:4 A
输出极性:INVERTED封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260电源:4.5/15 V
认证状态:Not Qualified座面最大高度:1.75 mm
子类别:MOSFET Drivers最大压摆率:1.35 mA
最大供电电压:15 V最小供电电压:4.5 V
标称供电电压:14 V表面贴装:YES
技术:BICMOS温度等级:INDUSTRIAL
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED断开时间:0.05 µs
接通时间:0.04 µs宽度:3.9 mm
Base Number Matches:1

UCC27423DRG4 数据手册

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UCC27423, UCC27424, UCC27425  
SLUS545D NOVEMBER 2002REVISED MAY 2013  
www.ti.com  
APPLICATION INFORMATION  
General Information  
High frequency power supplies often require high-speed, high-current drivers such as the UCC27423/4/5 family.  
A leading application is the need to provide a high power buffer stage between the PWM output of the control IC  
and the gates of the primary power MOSFET or IGBT switching devices. In other cases, the driver IC is utilized  
to drive the power device gates through a drive transformer. Synchronous rectification supplies also have the  
need to simultaneously drive multiple devices which can present an extremely large load to the control circuitry.  
Driver ICs are utilized when it is not feasible to have the primary PWM regulator IC directly drive the switching  
devices for one or more reasons. The PWM IC may not have the brute drive capability required for the intended  
switching MOSFET, limiting the switching performance in the application. In other cases there may be a desire to  
minimize the effect of high frequency switching noise by placing the high current driver physically close to the  
load. Also, newer ICs that target the highest operating frequencies may not incorporate onboard gate drivers at  
all. Their PWM outputs are only intended to drive the high impedance input to a driver such as the  
UCC27423/4/5. Finally, the control IC may be under thermal stress due to power dissipation, and an external  
driver can help by moving the heat from the controller to an external package.  
Input Stage  
The input thresholds have a 3.3V logic sensitivity over the full range of VDD voltages; yet it is equally compatible  
with 0 to VDD signals. The inputs of UCC27423/4/5 family of drivers are designed to withstand 500-mA reverse  
current without either damage to the IC for logic upset. The input stage of each driver should be driven by a  
signal with a short rise or fall time. This condition is satisfied in typical power supply applications, where the input  
signals are provided by a PWM controller or logic gates with fast transition times (<200 ns). The input stages to  
the drivers function as a digital gate, and they are not intended for applications where a slow changing input  
voltage is used to generate a switching output when the logic threshold of the input section is reached. While this  
may not be harmful to the driver, the output of the driver may switch repeatedly at a high frequency.  
Users should not attempt to shape the input signals to the driver in an attempt to slow down (or delay) the signal  
at the output. If limiting the rise or fall times to the power device is desired, limit the rise or fall times to the power  
device, then an external resistance can be added between the output of the driver and the load device, which is  
generally a power MOSFET gate. The external resistor may also help remove power dissipation from the devoce  
package, as discussed in the section on Thermal Considerations.  
Output Stage  
Inverting outputs of the UCC27423 and OUTA of the UCC27425 are intended to drive external P-channel  
MOSFETs. Noninverting outputs of the UCC27424 and OUTB of the UCC27425 are intended to drive external N-  
channel MOSFETs.  
Each output stage is capable of supplying ±4A peak current pulses and swings to both VDD and GND. The  
pullup/pulldown circuits of the driver are constructed of bipolar and MOSFET transistors in parallel. The peak  
output current rating is the combined current from the bipolar and MOSFET transistors. The output resistance is  
the RDS(on) of the MOSFET transistor when the voltage on the driver output is less than the saturation voltage of  
the bipolar transistor. Each output stage also provides a very low impedance to overshoot and undershoot due to  
the body diode of the external MOSFET. This means that in many cases, external-schottky-clamp diodes are not  
required.  
The UCC27423 family delivers 4A of gate drive where it is most needed during the MOSFET switching  
transition – at the Miller plateau region – providing improved efficiency gains. A unique BiPolar and MOSFET  
hybrid output stage in parallel also allows efficient current sourcing at low supply voltages.  
Source/Sink Capabilities During Miller Plateau  
Large power MOSFETs present a large load to the control circuitry. Proper drive is required for efficient, reliable  
operation. The UCC27423/4/5 drivers have been optimized to provide maximum drive to a power MOSFET  
during the Miller plateau region of the switching transition. This interval occurs while the drain voltage is swinging  
between the voltage levels dictated by the power topology, requiring the charging/discharging of the drain-gate  
capacitance with current supplied or removed by the driver device. [1]  
6
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Copyright © 2002–2013, Texas Instruments Incorporated  
Product Folder Links: UCC27423 UCC27424 UCC27425  

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