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UCC27210DDAR PDF预览

UCC27210DDAR

更新时间： 2024-11-18 08:26:03
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德州仪器 - TI 驱动器
页数 文件大小 规格书
28页 1081K
描述
120-V Boot, 4-A Peak, High Frequency High-Side/Low-Side Driver

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UCC27210DDAR 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：SOIC
包装说明：HLSOP, SOP8,.25针数：8
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8542.39.00.01Factory Lead Time：6 weeks
风险等级：1.59高边驱动器：YES
接口集成电路类型：HALF BRIDGE BASED MOSFET DRIVERJESD-30 代码：R-PDSO-G8
JESD-609代码：e4长度：4.89 mm
湿度敏感等级：1功能数量：1
端子数量：8最高工作温度：140 °C
最低工作温度：-40 °C最大输出电流：4 A
标称输出峰值电流：4 A输出极性：TRUE
封装主体材料：PLASTIC/EPOXY封装代码：HLSOP
封装等效代码：SOP8,.25封装形状：RECTANGULAR
封装形式：SMALL OUTLINE, HEAT SINK/SLUG, LOW PROFILE峰值回流温度（摄氏度）：260
电源：12 V认证状态：Not Qualified
座面最大高度：1.7 mm子类别：MOSFET Drivers
最大压摆率：5.2 mA最大供电电压：17 V
最小供电电压：8 V标称供电电压：12 V
表面贴装：YES温度等级：AUTOMOTIVE
端子面层：Nickel/Palladium/Gold (Ni/Pd/Au)端子形式：GULL WING
端子节距：1.27 mm端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED断开时间：0.4 µs
接通时间：0.6 µs宽度：3.9 mm
Base Number Matches：1

UCC27210DDAR 数据手册

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UCC27210  
UCC27211  
www.ti.com  
SLUSAT7B –NOVEMBER 2011–REVISED FEBRUARY 2012  
120-V Boot, 4-A Peak, High Frequency High-Side/Low-Side Driver  
Check for Samples: UCC27210, UCC27211  
1
FEATURES  
APPLICATIONS  
2
•
Drives Two N-Channel MOSFETs in  
•
Power Supplies for Telecom, Datacom, and  
High-Side/Low-Side Configuration with  
Independent Inputs  
Merchant  
•
•
•
•
•
•
Half-Bridge and Full-Bridge Converters  
Push-Pull Converters  
•
•
•
•
Maximum Boot Voltage 120-V DC  
4-A Sink, 4-A Source Output Currents  
0.9-Ω Pull-Up/Pull-Down Resistance  
High Voltage Synchronous-Buck Converters  
Two-Switch Forward Converters  
Active-Clamp Forward Converters  
Class-D Audio Amplifiers  
Input Pins can Tolerate -10 V to 20 V and are  
Independent of Supply Voltage Range  
•
•
•
TTL or Pseudo-CMOS Compatible Input  
Versions  
DESCRIPTION  
8-V to 17-V VDD Operating Range, (20 V ABS  
MAX)  
The UCC27210 and UCC27211 Drivers are based on  
the popular UCC27200 and UCC27201 MOSFET  
drivers, but offer several significant performance  
improvements. Peak output pull-up and pull-down  
current has been increased to 4-A source/4-A sink,  
and pull-up/pull-down resistance have been reduced  
to 0.9 Ω, thereby allowing for driving large power  
MOSFETs with minimized switching losses during the  
transition through the MOSFET’s Miller Plateau. The  
input structure is now able to directly handle -10  
VDC, which increases robustness and also allows  
direct interface to gate-drive transformers without  
using rectification diodes. The inputs are also  
independent of supply voltage and have a 20-V  
maximum rating.  
7.2-ns Rise and 5.5-ns Fall Time with 1000-pF  
Load  
•
•
•
Fast Propagation Delay Times (18 ns typical)  
2-ns Delay Matching  
Symmetrical Under Voltage Lockout for  
High-Side and Low-Side Driver  
•
•
All Industry Standard Packages Available  
(SOIC-8, PowerPAD™ SOIC-8, 4-mm x 4-mm  
SON-8 and 4-mm x 4-mm SON-10)  
Specified from -40 to 140 °C  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas  
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
2
PowerPAD is a trademark of Texas Instruments.  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
Copyright © 2011–2012, Texas Instruments Incorporated  
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UCC27210DDAR 替代型号

型号 品牌 替代类型 描述 数据表
UCC27210DDA TI

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