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UCC27200DRMTG4 PDF预览

UCC27200DRMTG4

更新时间： 2024-11-08 15:55:55
品牌 Logo 应用领域
德州仪器 - TI 驱动光电二极管接口集成电路
页数 文件大小 规格书
34页 1544K
描述
3A HALF BRIDGE BASED PRPHL DRVR, PDSO8, GREEN, PLASTIC, SON-8

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UCC27200DRMTG4 技术参数

是否无铅： 含铅是否Rohs认证： 符合
生命周期：Obsolete零件包装代码：SON
包装说明：HVSON, SOLCC8,.15,32针数：8
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8542.39.00.01风险等级：5.09
内置保护：UNDER VOLTAGE接口集成电路类型：HALF BRIDGE BASED PERIPHERAL DRIVER
JESD-30 代码：S-PDSO-N8JESD-609代码：e4
长度：4 mm湿度敏感等级：2
功能数量：1端子数量：8
最高工作温度：140 °C最低工作温度：-40 °C
输出电流流向：SOURCE AND SINK标称输出峰值电流：3 A
封装主体材料：PLASTIC/EPOXY封装代码：HVSON
封装等效代码：SOLCC8,.15,32封装形状：SQUARE
封装形式：SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE峰值回流温度（摄氏度）：260
电源：12 V认证状态：Not Qualified
座面最大高度：1 mm子类别：MOSFET Drivers
最大供电电压：17 V最小供电电压：8 V
标称供电电压：12 V表面贴装：YES
温度等级：AUTOMOTIVE端子面层：Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式：NO LEAD端子节距：0.8 mm
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
宽度：4 mmBase Number Matches：1

UCC27200DRMTG4 数据手册

 浏览型号UCC27200DRMTG4的Datasheet PDF文件第2页浏览型号UCC27200DRMTG4的Datasheet PDF文件第3页浏览型号UCC27200DRMTG4的Datasheet PDF文件第4页浏览型号UCC27200DRMTG4的Datasheet PDF文件第5页浏览型号UCC27200DRMTG4的Datasheet PDF文件第6页浏览型号UCC27200DRMTG4的Datasheet PDF文件第7页 
UCC27200, UCC27201  
www.ti.com ....................................................................................................................................... SLUS746B–DECEMBER 2006–REVISED NOVEMBER 2008  
120-V Boot, 3-A Peak, High Frequency, High-Side/Low-Side Driver  
1
FEATURES  
CONTENTS  
2
•
Specified from -40 °C to 140 °C  
•
Drives Two N-Channel MOSFETs in  
High-Side/Low-Side Configuration  
Device Ratings  
2
Electrical Characteristics  
Device Information  
4
•
•
•
•
•
•
•
•
•
Maximum Boot Voltage 120 V  
11  
14  
22  
Maximum VDD Voltage 20 V  
On-Chip 0.65-V VF, 0.6-Ω RD Bootstrap Diode  
Greater than 1 MHz of Operation  
20-ns Propagation Delay Times  
3-A Sink, 3-A Source Output Currents  
8-ns Rise/7-ns Fall Time with 1000-pF Load  
1-ns Delay Matching  
Application Information  
Additional References  
DESCRIPTION  
The UCC27200/1 family of high frequency N-Channel  
MOSFET drivers include a 120-V bootstrap diode and  
high-side/low-side driver with independent inputs for  
maximum control flexibility. This allows for N-Channel  
MOSFET control in half-bridge, full-bridge, two-switch  
forward and active clamp forward converters. The  
low-side and the high-side gate drivers are  
independently controlled and matched to 1-ns  
between the turn-on and turn-off of each other.  
Under Voltage Lockout for High-Side and  
Low-Side Driver  
APPLICATIONS  
•
Power Supplies for Telecom, Datacom, and  
Merchant Markets  
Half-Bridge Applications and Full-Bridge  
Converters  
•
•
•
•
•
•
Isolated Bus Architecture  
Two-Switch Forward Converters  
Active-Clamp Forward Converters  
High Voltage Synchronous-Buck Converters  
Class-D Audio Amplifiers  
Simplified Application Diagram  
+12V  
+100V  
SECONDARY  
SIDE  
VDD  
HB  
CIRCUIT  
HI  
LI  
DRIVE  
HI  
HO  
HS  
PWM  
CONTROLLER  
LO  
DRIVE  
LO  
UCC27200/1  
VSS  
ISOLATION  
AND  
FEEDBACK  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas  
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
2
PowerPad is a trademark of Texas Instruments.  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
Copyright © 2006–2008, Texas Instruments Incorporated  
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UCC27200DRMTG4 替代型号

型号 品牌 替代类型 描述 数据表
UCC27200DRMR TI

完全替代

 120-V Boot, 3-A Peak, High Frequency, High-Side/Low-Side Driver
UCC27200DRMT TI

类似代替

 120-V Boot, 3-A Peak, High Frequency, High-Side/Low-Side Driver

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