Datasheet > U633H04SC45G1

U633H04SC45G1

更新时间： 2023-08-15 00:00:00

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		静态存储器光电二极管
页数	文件大小	规格书
13页	202K
描述
512X8 NON-VOLATILE SRAM, 45ns, PDSO28, 0.300 INCH, SOP-28

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U633H04SC45G1 数据手册

U633H04

Preliminary

C-Type

K-Type

Unit

DC Characteristics

Symbol

Conditions

Min. Max. Min. Max.

V_CC

I_OH

I_OL

= 4.5 V

=-4 mA

= 8 mA

Output High Voltage

Output Low Voltage

V_OH

V_OL

2.4

0.4

-4

0.4

-4

V_CC

V_OH

V_OL

= 4.5 V

= 2.4 V

= 0.4 V

I_OH

I_OL

Output High Current

Output Low Current

V_CC

Input Leakage Current

= 5.5 V

V_IH

V_IL

I_IH

I_IL

High

Low

= 5.5 V

µA

0 V

-1

V_CC

Output Leakage Current

= 5.5 V

V_OH

V_OL

I_OHZ

I_OLZ

High at Three-State- Output

Low at Three-State- Output

= 5.5 V

µA

0 V

SRAM MEMORY OPERATIONS

Symbol

Switching Characteristics

No.

Unit

Read Cycle

Alt.

IEC

Min.

Max.

Min.

Max.

t_AVAV

t_AVQV

t_ELQV

t_GLQV

t_EHQZ

t_cR

t_a(A)

t_a(E)

t_a(G)

t_dis(E)

Read Cycle Time^f

Address Access Time to Data Valid^g

Chip Enable Access Time to Data Valid

Output Enable Access Time to Data Valid

E HIGH to Output in High-Z^h

G HIGH to Output in High-Z^h

t_GHQZ

t_ELQX

t_GLQX

t_dis(G)

t_en(E)

E LOW to Output in Low-Z

G LOW to Output in Low-Z

t_en(G)

t_v(A)

t_PU

Output Hold Time after Address Change

t_AXQX

t_ELICCH

t_EHICCL

10 Chip Enable to Power Active^e

11 Chip Disable to Power Standby^{d, e}

t_PD

e: Parameter guaranteed but not tested.

f: Device is continuously selected with E and G both LOW.

g: Address valid prior to or coincident with E transition LOW.

h: Measured ± 200 mV from steady state output voltage.

December 12, 1997

1 2 345 6 7...13

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