Datasheet > U633H04SC45G1

U633H04SC45G1

更新时间： 2023-08-15 00:00:00

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		静态存储器光电二极管
页数	文件大小	规格书
13页	202K
描述
512X8 NON-VOLATILE SRAM, 45ns, PDSO28, 0.300 INCH, SOP-28

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U633H04SC45G1 数据手册

U633H04

Preliminary

V_CCX

V_SS

Block Diagram

EEPROM

Array

V_CAP

STORE

RECALL

V_CCXV_CAP

SRAM

Array

Power

Control

16 Rows x

(32 x 8) Columns

Store/

Recall

HSB

DQ0

DQ1

DQ2

DQ3

DQ4

DQ5

DQ6

DQ7

Column I/O

Column Decoder

A0 A1 A2 A3 A4

Truth Table for SRAM Operations

Operating Mode

HSB

DQ0 - DQ7

Standby/not selected

Internal Read

Read

High-Z

Data Outputs Low-Z

Data Inputs High-Z

Write

* H or L

Characteristics

All voltages are referenced to V_SS= 0 V (ground).

All characteristics are valid in the power supply voltage range and in the operating temperature range specified.

Dynamic measurements are based on a rise and fall time of ≤ 5 ns, measured between 10 % and 90 % of V _I, as well as

input levels of V_IL= 0 V and V_IH= 3 V. The timing reference level of all input and output signals is 1.5 V,

with the exception of the t_dis-times and t_en-times, in which cases transition is measured ± 200 mV from steady-state voltage.

Absolute Maximum Ratings^a

Symbol

Min.

Max.

Unit

Power Supply Voltage

Input Voltage

V_CC

V_I

-0.5

-0.3

V_CC+0.5

Output Voltage

V_O

P_D

T_a

Power Dissipation

Operating Temperature

C-Type

K-Type

-40

°C

Storage Temperature

T_stg

-65

150

°C

a: Stresses greater than those listed under „Absolute Maximum Ratings“ may cause permanent damage to the device. This is a stress

rating only, and functional operation of the device at condition above those indicated in the operational sections of this specification is

not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

December 12, 1997

123 4 5 6 7...13

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