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U1GC44 PDF预览

U1GC44

更新时间: 2024-11-24 22:18:27
品牌 Logo 应用领域
东芝 - TOSHIBA 整流二极管光电二极管
页数 文件大小 规格书
3页 135K
描述
TOSHIBA RECTIFIER SILICON DIFFUSED JUNCTION TYPE

U1GC44 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:PLASTIC, 3-4D1A, 2 PIN针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.56
Is Samacsys:N配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.2 VJESD-30 代码:R-PDSO-C2
最大非重复峰值正向电流:33 A元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-40 °C最大输出电流:0.9 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:400 V
子类别:Rectifier Diodes表面贴装:YES
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

U1GC44 数据手册

 浏览型号U1GC44的Datasheet PDF文件第2页浏览型号U1GC44的Datasheet PDF文件第3页 
U1BC44,U1GC44,U1JC44  
TOSHIBA RECTIFIER SILICON DIFFUSED JUNCTION TYPE  
U1BC44,U1GC44,U1JC44  
FOR HYBRID USE  
Unit: mm  
l Average Forward Current  
l Repetitive Peak Reverse Voltage  
l Mini Plastic Mold Package  
: I  
= 1.0A  
= 100, 400, 600V  
F (AV)  
: V  
RRM  
MAXIMUM RATINGS (Ta = 25°C)  
CHARACTERISTIC  
SYMBOL  
RATING  
UNIT  
V
U1BC44  
U1GC44  
U1JC44  
100  
400  
600  
Repetitive Peak  
V
RRM  
Reverse Voltage  
1.0  
On Ceramic Substrate  
Average  
Forward  
Current  
(Ta = 75°C)  
I
A
A
F (AV)  
On Glassepoxy  
0.9  
Substrate  
(Ta = 25°C)  
30 (50Hz)  
33 (60Hz)  
40~150  
40~150  
Peak One Cycle Surge Forward  
I
FSM  
Current (NonRepetitive)  
JEDEC  
JEITA  
Junction Temperature  
T
j
°C  
°C  
TOSHIBA  
Weight: 0.06g  
34D1A  
Storage Temperature Range  
T
stg  
ELECTRICAL CHARACTERISTICS (Ta = 25°C)  
CHARACTERISTIC  
Peak Forward Voltage  
SYMBOL  
TEST CONDITION  
= 1.0A  
MIN  
TYP.  
MAX  
1.2  
UNIT  
V
V
I
FM  
FM  
Repetitive Peak Reverse  
Current  
I
V
= Rated  
RRM  
10  
µA  
RRM  
On ceramic substrate  
60  
Thermal Resistance  
R
DC  
°C / W  
th (ja)  
On glass-epoxy substrate  
120  
STANDARD SOLDERING PAD  
1
2001-07-18  

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