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U1AFS1500-FG256YI PDF预览

U1AFS1500-FG256YI

更新时间: 2024-11-21 19:59:47
品牌 Logo 应用领域
美高森美 - MICROSEMI 可编程逻辑
页数 文件大小 规格书
334页 18751K
描述
Field Programmable Gate Array,

U1AFS1500-FG256YI 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
风险等级:5.89JESD-609代码:e0
湿度敏感等级:3峰值回流温度(摄氏度):225
可编程逻辑类型:FIELD PROGRAMMABLE GATE ARRAY端子面层:Tin/Lead (Sn/Pb)
处于峰值回流温度下的最长时间:20Base Number Matches:1

U1AFS1500-FG256YI 数据手册

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Revision 4  
Fusion Family of Mixed Signal FPGAs  
In-System Programming (ISP) and Security  
Features and Benefits  
ISP with 128-Bit AES via JTAG  
®
High-Performance Reprogrammable Flash Technology  
FlashLock Designed to Protect FPGA Contents  
Advanced 130-nm, 7-Layer Metal, Flash-Based CMOS Process  
Nonvolatile, Retains Program when Powered Off  
Instant On Single-Chip Solution  
Advanced Digital I/O  
1.5 V, 1.8 V, 2.5 V, and 3.3 V Mixed-Voltage Operation  
Bank-Selectable I/O Voltages – Up to 5 Banks per Chip  
Single-Ended I/O Standards: LVTTL, LVCMOS  
3.3 V / 2.5 V /1.8 V / 1.5 V, 3.3 V PCI / 3.3 V PCI-X, and  
LVCMOS 2.5 V / 5.0 V Input  
Differential I/O Standards: LVPECL, LVDS, B-LVDS, M-LVDS  
– Built-In I/O Registers  
– 700 Mbps DDR Operation  
Hot-Swappable I/Os  
350 MHz System Performance  
Embedded Flash Memory  
User Flash Memory – 2 Mbits to 8 Mbits  
– Configurable 8-, 16-, or 32-Bit Datapath  
– 10 ns Access in Read-Ahead Mode  
1 Kbit of Additional FlashROM  
Integrated A/D Converter (ADC) and Analog I/O  
Programmable Output Slew Rate, Drive Strength, and Weak  
Pull-Up/Down Resistor  
Pin-Compatible Packages across the Fusion Family  
Up to 12-Bit Resolution and up to 600 Ksps  
Internal 2.56 V or External Reference Voltage  
ADC: Up to 30 Scalable Analog Input Channels  
High-Voltage Input Tolerance: –10.5 V to +12 V  
Current Monitor and Temperature Monitor Blocks  
Up to 10 MOSFET Gate Driver Outputs  
– P- and N-Channel Power MOSFET Support  
– Programmable 1, 3, 10, 30 µA, and 20 mA Drive Strengths  
ADC Accuracy is Better than 1%  
®
SRAMs and FIFOs  
Variable-Aspect-Ratio 4,608-Bit SRAM Blocks (×1, ×2, ×4, ×9,  
and ×18 organizations available)  
True Dual-Port SRAM (except ×18)  
Programmable Embedded FIFO Control Logic  
Soft ARM Cortex-M1 Fusion Devices (M1)  
®
On-Chip Clocking Support  
ARM Cortex-™M1–Enabled  
Internal 100 MHz RC Oscillator (accurate to 1%)  
Crystal Oscillator Support (32 KHz to 20 MHz)  
Pigeon Point ATCA IP Support (P1)  
®
Targeted to Pigeon Point Board Management Reference  
(BMR) Starter Kits  
Designed in Partnership with Pigeon Point Systems  
ARM Cortex-M1 Enabled  
Programmable Real-Time Counter (RTC)  
6 Clock Conditioning Circuits (CCCs) with 1 or 2 Integrated PLLs  
– Phase Shift, Multiply/Divide, and Delay Capabilities  
– Frequency: Input 1.5–350 MHz, Output 0.75–350 MHz  
MicroBlade Advanced Mezzanine Card Support (U1)  
Low Power Consumption  
Targeted to Advanced Mezzanine Card (AdvancedMC™ Designs)  
Designed in Partnership with MicroBlade  
8051-Based Module Management Controller (MMC)  
Single 3.3 V Power Supply with On-Chip 1.5 V Regulator  
Sleep and Standby Low-Power Modes  
Table 1 • Fusion Family  
Fusion Devices  
AFS090  
AFS250  
AFS600  
AFS1500  
*
ARM Cortex-M1 Devices  
M1AFS250  
M1AFS600  
M1AFS1500  
Pigeon Point Devices  
MicroBlade Devices  
P1AFS600  
P1AFS1500  
U1AFS250  
U1AFS600  
U1AFS1500  
System Gates  
90,000  
2,304  
Yes  
1
250,000  
600,000  
13,824  
Yes  
2
1,500,000  
38,400  
Yes  
2
Tiles (D-flip-flops)  
Secure (AES) ISP  
PLLs  
6,144  
Yes  
1
General  
Information  
Globals  
18  
18  
1
18  
18  
Flash Memory Blocks (2 Mbits)  
Total Flash Memory Bits  
FlashROM Bits  
1
2
4
2M  
1,024  
6
2M  
1,024  
8
4M  
1,024  
24  
8M  
Memory  
1,024  
60  
RAM Blocks (4,608 bits)  
RAM kbits  
27  
36  
6
108  
10  
270  
10  
Analog Quads  
5
Analog Input Channels  
Gate Driver Outputs  
I/O Banks (+ JTAG)  
Maximum Digital I/Os  
Analog I/Os  
15  
18  
6
30  
30  
5
10  
10  
Analog and I/Os  
4
4
5
5
75  
114  
24  
172  
40  
252  
40  
20  
Note: *Refer to the Cortex-M1 product brief for more information.  
January 2013  
I
© 2013 Microsemi Corporation  

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