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TZX3V6C PDF预览

TZX3V6C

更新时间: 2024-11-24 07:05:23
品牌 Logo 应用领域
威世 - VISHAY 二极管齐纳二极管测试
页数 文件大小 规格书
7页 98K
描述
Silicon Epitaxial Planar Z-Diodes

TZX3V6C 数据手册

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TZX...  
Vishay Telefunken  
Silicon Epitaxial Planar Z–Diodes  
Features  
Very sharp reverse characteristic  
Low reverse current level  
Very high stability  
Low noise  
Available with tighter tolerances  
Applications  
94 9367  
Voltage stabilization  
Absolute Maximum Ratings  
T = 25 C  
j
Parameter  
Power dissipation  
Z–current  
Junction temperature  
Storage temperature range  
Test Conditions  
l=4mm, T =25 C  
Type  
Symbol  
Value  
500  
Unit  
mW  
mA  
C
P
V
L
I
Z
P /V  
V
Z
T
175  
–65...+175  
j
T
stg  
C
Maximum Thermal Resistance  
T = 25 C  
j
Parameter  
Junction ambient  
Test Conditions  
Symbol  
R
thJA  
Value  
300  
Unit  
K/W  
l=4mm, T =constant  
L
Electrical Characteristics  
T = 25 C  
j
Parameter  
Forward voltage  
Test Conditions  
I =200mA  
Type  
Symbol Min  
Typ Max Unit  
1.5  
V
F
V
F
www.vishay.de FaxBack +1-408-970-5600  
Document Number 85614  
Rev. 2, 01-Apr-99  
1 (7)  

TZX3V6C 替代型号

型号 品牌 替代类型 描述 数据表
TZX3V6C-TR VISHAY

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