Datasheet > TYN16X-600CTF

TYN16X-600CTF

更新时间： 2024-04-09 19:00:32

品牌	Logo	应用领域
瑞能 - WEEN		/
页数	文件大小	规格书
11页	469K
描述
Planar passivated Silicon Controlled Rectifier (SCR) in a TO220F plastic package intended for use in applications requiring very high inrush current capability, high thermal cycling performance and high junction temperature capability (Tj(max) = 150 °C).

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TYN16X-600CTF 数据手册

WeEn Semiconductors

TYN16X-600CTF

SCR

11. Characteristics

Table 8. Characteristics

Symbol Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

I_GT

I_L

gate trigger current

latching current

holding current

V_D= 12 V; I_T= 0.1 A; T_j= 25 °C; Fig. 7

V_D= 12 V; I_G= 0.1 A; T_j= 25 °C; Fig. 8

V_D= 12 V; T_j= 25 °C; Fig. 9

1.6

I_H

V_T

V_GT

on-state voltage

gate trigger voltage

I_T= 16 A; T_j= 25 °C; Fig. 10

V_D= 12 V; I_T= 0.1 A;T_j= 25 °C; Fig. 11

V_D= 400 V; I_T= 0.1 A;T_j= 150 °C

V_D= 600 V; T_j= 150 °C

0.75

0.25

0.4

I_D

I_R

oﬀ-state current

reverse current

V_D= 600 V; T_j= 150 °C

Dynamic characteristics

dV_D/dt

rate of rise of oﬀ-state

voltage

V_DM= 402 V; T_j= 150 °C; (V_DM= 67%

of V_DRM); exponential waveform; gate

open circuit

400

V/μs

t_gt

t_q

gate-controlled turn-on

time

I_TM= 16 A; V_D= 600 V; I_G= 100 mA;

(dI_G/dt)_M= 5 A/μs; T_j= 25 °C

μs

commutated turn-oﬀ

time

I_TM= 2 A; t_p= 50 μs; dV_D/dt = 5 V/μs; dI/

dt = 30 A/μs

Fig. 7. Normalized gate trigger current as a function

of junction temperature

Fig. 8. Normalized latching current as a function of

junction temperature

TYN16X-600CTF

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Product data sheet

29 January 2023

6 / 11

1...3 4 567 8 9...11

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