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TYN16Y-600CTF PDF预览

TYN16Y-600CTF

更新时间: 2024-09-20 17:02:07
品牌 Logo 应用领域
瑞能 - WEEN /
页数 文件大小 规格书
12页 478K
描述
Planar passivated Silicon Controlled Rectifier (SCR) in a IITO220 package intended for use in applications requiring good bidirectional blocking voltage and high surge current capability and high junction temperature capability (Tj(max) = 150 °C).

TYN16Y-600CTF 数据手册

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TYN16Y-600CTF  
SCR  
Rev.02 - 26 May 2023  
Product data sheet  
1. General description  
Planar passivated Silicon Controlled Rectifier (SCR) in a IITO220 package intended for use in  
applications requiring good bidirectional blocking voltage and high surge current capability and high  
junction temperature capability (Tj(max) = 150 °C).  
2. Features and benefits  
High junction operating temperature capability (Tj(max) = 150 °C)  
High bidirectional blocking voltage capability  
Very high current surge capability  
High thermal cycling performance  
Planar passivated for voltage ruggedness and reliability  
Internally insulated package  
Isolated mounting base with 2500 V(RMS) isolation  
3. Applications  
Capacitive Discharge Ignition (CDI)  
Crowbar protection  
Inrush protection  
Motor control  
Voltage regulation  
4. Quick reference data  
Table 1. Quick reference data  
Symbol Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
VDRM  
IT(RMS)  
ITSM  
repetitive peak off-state  
voltage  
-
-
600  
V
RMS on-state current  
half sine wave; Tmb ≤ 118 °C;  
Fig. 1; Fig. 2; Fig. 3  
-
-
-
-
16  
A
A
non-repetitive peak on-  
state current  
half sine wave; Tj(init) = 25 °C; tp = 10 ms;  
Fig. 4; Fig. 5  
188  
half sine wave; Tj(init) = 25 °C; tp = 8.3 ms  
-
-
-
-
207  
150  
A
Tj  
junction temperature  
°C  
Static characteristics  
IGT gate trigger current  
IH  
VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig. 7  
VD = 12 V; Tj = 25 °C; Fig. 9  
5
-
-
-
-
10  
40  
1.6  
mA  
mA  
V
holding current  
on-state voltage  
VT  
IT = 16 A; Tj = 25 °C; Fig. 10  
-
Dynamic characteristics  
dVD/dt rate of rise of off-state  
voltage  
VDM = 402 V; Tj = 150 °C; (VDM = 67%  
of VDRM); exponential waveform; gate  
open circuit  
400  
-
-
V/μs  

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