Datasheet > TYN16X-800RT

TYN16X-800RT

更新时间： 2022-02-26 14:17:04

品牌	Logo	应用领域
瑞能 - WEEN		/
页数	文件大小	规格书
12页	283K
描述
SCR

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

TYN16X-800RT 数据手册

TYN16X-800RT

SCR

3 September 2018

Product data sheet

1. General description

Planar passivated Silicon Controlled Rectifier (SCR) in a SOT186A (TO-220F) "full pack" plastic

package intended for use in applications requiring very high inrush current capability, high thermal

cycling performance and high junction temperature capability (T_j(max)= 150 °C).

2. Features and benefits

•

High junction operating temperature capability

•

High thermal cycling performance

High voltage capability

Isolated package

Planar passivated for voltage ruggedness and reliability

Very High current surge capability

3. Applications

•

Ignition circuits

Motor control

Protection circuits e.g. SMPS inrush current

Voltage regulation

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_RRM

repetitive peak reverse

voltage

800

I_T(AV)

I_T(RMS)

I_TSM

average on-state

current

half sine wave; T_h≤ 86 °C; Fig. 1

10.2

RMS on-state current

half sine wave; T_h≤ 86 °C; Fig. 2;

Fig. 3

non-repetitive peak on- half sine wave; T_j(init)= 25 °C;

state current

210

231

150

t_p= 10 ms; Fig. 4; Fig. 5

half sine wave; T_j(init)= 25 °C;

t_p= 8.3 ms

T_j

junction temperature

°C

Static characteristics

I_GT

gate trigger current

V_D= 12 V; I_T= 0.1 A; T_j= 25 °C; Fig. 7

4.5

Dynamic characteristics

12 3 4 5 6 7...12

下载PDF

与TYN16X-800RT相关器件

型号	品牌	描述	获取价格	数据表
TYN16Y-600CT	WEEN	Planar passivated Silicon Controlled Rectifie	获取价格
TYN16Y-600CTF	WEEN	Planar passivated Silicon Controlled Rectifie	获取价格
TYN20	STMICROELECTRONICS	THYRISTORS	获取价格
TYN204	STMICROELECTRONICS	THYRISTORS	获取价格
TYN204/F3	STMICROELECTRONICS	4A, 200V, SCR, TO-220, TO-220, 2 PIN	获取价格
TYN206	STMICROELECTRONICS	Silicon controlled rectifiers	获取价格