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TXS4555RUTR PDF预览

TXS4555RUTR

更新时间： 2024-12-01 08:31:51
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德州仪器 - TI 转换器电平转换器
页数 文件大小 规格书
18页 739K
描述
1.8V/3V SIM Card Power Supply With Level Translator

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中文翻译

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TXS4555RUTR 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：QFN
包装说明：VQCCN, LCC12,.07X.08,16针数：12
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8542.39.00.01Factory Lead Time：1 week
风险等级：1.61接口集成电路类型：INTERFACE CIRCUIT
JESD-30 代码：R-PQCC-N12JESD-609代码：e4
长度：2 mm湿度敏感等级：1
位数：3功能数量：1
端子数量：12最高工作温度：85 °C
最低工作温度：-40 °C输出特性：3-STATE
封装主体材料：PLASTIC/EPOXY封装代码：VQCCN
封装等效代码：LCC12,.07X.08,16封装形状：RECTANGULAR
封装形式：CHIP CARRIER, VERY THIN PROFILE峰值回流温度（摄氏度）：260
电源：1.6/3.3 V认证状态：Not Qualified
座面最大高度：0.55 mm子类别：Other Interface ICs
最大压摆率：0.005 mA最大供电电压：3.3 V
最小供电电压：1.65 V标称供电电压：1.8 V
表面贴装：YES温度等级：INDUSTRIAL
端子面层：Nickel/Palladium/Gold (Ni/Pd/Au)端子形式：NO LEAD
端子节距：0.4 mm端子位置：QUAD
处于峰值回流温度下的最长时间：NOT SPECIFIED宽度：1.7 mm
Base Number Matches：1

TXS4555RUTR 数据手册

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TXS4555  
www.ti.com  
SBOS550A –FEBRUARY 2011–REVISED MARCH 2011  
1.8V/3V SIM Card Power Supply With Level Translator  
Check for Samples: TXS4555  
1
FEATURES  
RGT Package  
(Top View)  
•
Level Translator  
–
–
VCC Range of 1.65 V to 3.3 V  
VBATT Range from 2.3 to 5.5V  
•
Low-Dropout (LDO) Regulator  
–
–
–
–
50-mA LDO Regulator With Enable  
1
2
3
4
12  
11  
10  
9
NC  
EN  
1.8-V or 2.95-V Selectable Output Voltage  
2.3-V to 5.5-V Input Voltage Range  
SIMCLK  
GND  
SEL  
VCC  
Exposed  
Thermal Pad  
Very Low Dropout: 100mV (Max) at 50mA  
•
•
Incorporates Shutdown Feature for the SIM  
Card Signals According to ISO-7816-3  
SIMRST  
NC  
ESD Protection Exceeds JESD 22  
–
–
–
2000-V Human-Body Model (A114-B)  
500-V Charged-Device Model (C101)  
8kV HBM for SIM Pins  
•
Package  
Note: The Exposed center thermal pad must be  
connected to Ground  
–
–
16-Pin QFN (3 mm x 3 mm)  
12-Pin QFN (2mm x 1.7mm)  
RUT Package  
(Top View)  
DESCRIPTION  
The TXS4555 is a complete Smart Identity Module  
(SIM) card solution for interfacing wireless baseband  
processors with a SIM card to store I/O for mobile  
handset applications. The device complies with  
ISO/IEC Smart-Card Interface requirements as well  
as GSM and 3G mobile standards. It includes a  
high-speed level translator capable of supporting  
Class-B (2.95 V) and Class-C (1.8 V) interfaces, a  
low-dropout (LDO) voltage regulator that has output  
voltages that are selectable between 2.95-V Class-B  
and 1.8-V Class-C interfaces.  
12  
6
SEL  
GND  
The device has two supply voltage pins. VCC can be operated over the full range of 1.65 V to 3.3 V and VBATT  
from 2.3 to 5.5 V. VPWR is set to either 1.8 V or 2.95 V and is supplied by an internal LDO. The integrated LDO  
accepts input voltages as high as 5.5 V and outputs either 1.8 V or 2.95 V at 50 mA to the B-side circuitry and to  
the external SIM card. The TXS4555 enables system designers to easily interface low-voltage microprocessors  
to SIM cards operating at 1.8 V or 2.95 V.  
The TXS4555 also incorporates shutdown sequence for the SIM card pins based on the ISO 7816-3 specification  
for SIM cards. Proper shutdown of the SIM card signals helps in prevention of corruption of data during  
accidental shutdown of the phone. The device also has 8kV HBM protection for the SIM pins and standard 2kV  
HBM protection for all the other pins.  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas  
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
PRODUCTION DATA information is current as of publication date.  
Copyright © 2011, Texas Instruments Incorporated  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
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