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TXS4558

更新时间: 2024-12-01 12:16:51
品牌 Logo 应用领域
德州仪器 - TI 转换器电平转换器
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18页 755K
描述
Dual-SIM Card Power Supply with Level Translator and Dedicated Dual LDO

TXS4558 数据手册

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TXS4558  
www.ti.com  
SLLSE93A SEPTEMBER 2011REVISED SEPTEMBER 2011  
Dual-SIM Card Power Supply with Level Translator and Dedicated Dual LDO  
Check for Samples: TXS4558  
1
FEATURES  
RUK PACKAGE  
(TOP VIEW)  
Level Translator  
VCC Range of 1.65 V to 3.3 V  
VBATT Range of 2.3V to 5.5V  
Low-Dropout (LDO) Regulator  
50-mA LDO Regulator With Enable  
1.8-V or 2.95-V Selectable Output Voltage  
Very Low Dropout: 100 mV (Max) at 50 mA  
Control and Communication Through GPIO  
Interface with Baseband Processor  
1
15  
VSIM2  
CLKRUN2  
2
3
4
5
14  
13  
12  
11  
CLKRUN1  
CSEL  
VCC  
Isolated Clock Stop Mode for both SIM1 and  
SIM2 cards  
GND  
VBATT  
ESD Protection Exceeds JESD 22  
VSEL1  
VSIM1  
2000-V Human-Body Model (A114-B)  
500-V Charged-Device Model (C101)  
8kV HBM for SIM pins  
En1  
SIM1_CLK  
Package  
20-Pin QFN (3 mm x 3 mm)  
NOTE: Exposed center thermal pad must be  
electrically connected to Ground.  
DESCRIPTION  
The TXS4558 is a complete dual-supply standby Smart Identity Module (SIM) card solution for interfacing wire-  
less baseband processors with two individual SIM subscriber cards to store data for mobile handset applications.  
It is a custom device which is used to extend a single SIM/UICC interface to be able to support two  
SIM’s/UICC’s.  
The device complies with ISO/IEC Smart-Card Interface requirements as well as GSM and 3G mobile standards.  
It includes a high-speed level translator capable of supporting Class-B (2.95 V) and Class-C (1.8 V) interfaces,  
two low-dropout (LDO) voltage regulators that have output voltages that are selectable between 2.95-V Class-B  
and 1.8-V Class-C interfaces. Simple GPIO inputs are used to switch between the two SIM cards and to put it  
into different modes. The voltage-level translator has two supply voltage pins. VCC sets the reference for the  
baseband interface and can be operated from 1.65 V to 3.3 V. VSIM1 and VSIM2 are programmed to either  
1.8 V or 2.95 V, each supplied by an independent internal LDO regulator. The integrated LDO accepts input  
battery voltages from 2.3 V to 5.5 V and outputs up to 50 mA to the B-side circuitry and external Class-B or  
Class-C SIM card.  
The TXS4558 also incorporates shutdown sequence for the SIM card pins based on the ISO 7816-3 specification  
for SIM cards. The device also has 8kV HBM protection for the SIM card pins and standard 2kV HBM protection  
for all the other pins.  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
PRODUCTION DATA information is current as of publication date.  
Copyright © 2011, Texas Instruments Incorporated  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  

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