TXS4558
www.ti.com
SLLSE93A –SEPTEMBER 2011–REVISED SEPTEMBER 2011
Dual-SIM Card Power Supply with Level Translator and Dedicated Dual LDO
Check for Samples: TXS4558
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FEATURES
RUK PACKAGE
(TOP VIEW)
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Level Translator
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VCC Range of 1.65 V to 3.3 V
VBATT Range of 2.3V to 5.5V
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Low-Dropout (LDO) Regulator
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50-mA LDO Regulator With Enable
1.8-V or 2.95-V Selectable Output Voltage
Very Low Dropout: 100 mV (Max) at 50 mA
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Control and Communication Through GPIO
Interface with Baseband Processor
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15
VSIM2
CLKRUN2
2
3
4
5
14
13
12
11
CLKRUN1
CSEL
VCC
Isolated Clock Stop Mode for both SIM1 and
SIM2 cards
GND
VBATT
ESD Protection Exceeds JESD 22
VSEL1
VSIM1
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2000-V Human-Body Model (A114-B)
500-V Charged-Device Model (C101)
8kV HBM for SIM pins
En1
SIM1_CLK
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Package
20-Pin QFN (3 mm x 3 mm)
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NOTE: Exposed center thermal pad must be
electrically connected to Ground.
DESCRIPTION
The TXS4558 is a complete dual-supply standby Smart Identity Module (SIM) card solution for interfacing wire-
less baseband processors with two individual SIM subscriber cards to store data for mobile handset applications.
It is a custom device which is used to extend a single SIM/UICC interface to be able to support two
SIM’s/UICC’s.
The device complies with ISO/IEC Smart-Card Interface requirements as well as GSM and 3G mobile standards.
It includes a high-speed level translator capable of supporting Class-B (2.95 V) and Class-C (1.8 V) interfaces,
two low-dropout (LDO) voltage regulators that have output voltages that are selectable between 2.95-V Class-B
and 1.8-V Class-C interfaces. Simple GPIO inputs are used to switch between the two SIM cards and to put it
into different modes. The voltage-level translator has two supply voltage pins. VCC sets the reference for the
baseband interface and can be operated from 1.65 V to 3.3 V. VSIM1 and VSIM2 are programmed to either
1.8 V or 2.95 V, each supplied by an independent internal LDO regulator. The integrated LDO accepts input
battery voltages from 2.3 V to 5.5 V and outputs up to 50 mA to the B-side circuitry and external Class-B or
Class-C SIM card.
The TXS4558 also incorporates shutdown sequence for the SIM card pins based on the ISO 7816-3 specification
for SIM cards. The device also has 8kV HBM protection for the SIM card pins and standard 2kV HBM protection
for all the other pins.
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Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Copyright © 2011, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.