Datasheet > TVP06B6V8-G

TVP06B6V8-G

更新时间： 2024-10-29 07:17:51

品牌	Logo	应用领域
上华 - COMCHIP		/
页数	文件大小	规格书
5页	113K
描述
SMD Transient Voltage Suppressor

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中文翻译

获取价格

数据手册

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TVP06B6V8-G 数据手册

SMD Transient Voltage Suppressor

TVP06B6V8-G Thru. TVP06B601-G

Breakdown Voltage: 6.8 ~ 600Volts

Power Dissipation: 600 Watts

RoHS Device

Features

SMB/DO-214AA

-Glass passivated chip.

-Low leakage.

-Uni and Bidirectional unit.

0.155(3.94)

0.130(3.30)

0.087(2.20)

0.077(1.96)

-Excellent clamping capability.

-Very fast response time.

0.191(4.85)

0.171(4.35)

-RoHS compliant.

0.012(0.30)

0.006(0.15)

Mechanical Data

-Case: Molded plastic,JEDEC SMB/DO-214AA

0.096(2.44)

0.084(2.13)

-Epoxy: UL 94V-0 rate flame retardant.

0.008(0.20)

0.001(0.02)

0.060(1.52)

0.030(0.75)

-Terminals: solderable per MIL-STD-750,

0.216(5.50)

0.201(5.10)

method 2026

-Polarity: Cathode band denoted.

-Approx. weight: 0.108 grams

Dimensions in inches and (millimeter)

Maximum Ratings and Electrical Characteristics

Rating at 25°C ambient temperature unless otherwise specified.

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristics

Symbol

PPP

Value

600

Units

Peak power dissipation on 10/1000μS

waveform (Note 1 )

Peak pulse current on 10/1000μS waveform

(Note 1)

IPP

See Next Table

Steady state power dissipation at TL=75

^OC

IFSM

5.0

100

Peak forward surge current, 8.3mS single half

sine-wave uni-directional only (Note 2)

Maximum instantaneous forward voltage at

25.0A for uni-directional only (Note 3)

3.5/5.0

^OC

Operation junction temperature

Storage temperature range

-55 to +150

TSTG

Note:

1. Non-repetitive current pulse, per Fig. 5 and derated above TA=25 ^OC per Fig.1

2. Measured on 8.3 mS single half sine-wave or equivalent square wave, duty cycle=4 pulse per minute maximum.

3. VF<3.5V for devices of VBR <200V and VF <5.0V for devices of VBR >201V

REV:A

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中文翻译

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