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TVP04A161A-G PDF预览

TVP04A161A-G

更新时间: 2024-10-29 19:45:31
品牌 Logo 应用领域
上华 - COMCHIP 二极管
页数 文件大小 规格书
5页 107K
描述
Transient Suppressor,

TVP04A161A-G 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.79
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE峰值回流温度(摄氏度):NOT SPECIFIED
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

TVP04A161A-G 数据手册

 浏览型号TVP04A161A-G的Datasheet PDF文件第2页浏览型号TVP04A161A-G的Datasheet PDF文件第3页浏览型号TVP04A161A-G的Datasheet PDF文件第4页浏览型号TVP04A161A-G的Datasheet PDF文件第5页 
SMD Transient Voltage Suppressor  
TVP04A6V8-G Thru. TVP04A601-G  
Breakdown Voltage: 6.8 to 600 Volts  
Peak Pulse Power: 400 Watts  
RoHS Device  
Features  
DO-214AC (SMA)  
-Glass passivated chip.  
-Low leakage.  
0.179(4.55)  
0.161(4.10)  
-400W peak pulse power capability with a 10/1000μs  
waveform, repetitive rate (duty cycle): 0.01%.  
0.109(2.76)  
0.099(2.51)  
0.064(1.63)  
0.049(1.23)  
-Uni and Bidirectional unit.  
-Excellent clamping capability.  
-Very fast response time.  
0.206(5.22)  
0.192(4.87)  
Mechanical data  
0.012(0.30)  
0.006(0.15)  
-Case: JEDEC DO-214AC, molded plastic.  
-Epoxy: UL 94V-0 rate flame retardant.  
-Terminals: Solderable per MIL-STD-750,  
-method 2026.  
0.089(2.26)  
0.077(1.96)  
0.008(0.20)  
0.000(0.00)  
0.059(1.51)  
0.030(0.75)  
-Polarity: Color band denotes cathode end.  
-Mounting position: Any.  
Dimensions in inches and (millimeter)  
-Approx. weight: 0.069 grams  
Maximum Ratings and Electrical Characteristics  
Ratings at 25°C ambient temperature unless otherwise specified.  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Value  
Characteristics  
Symbol  
Units  
Peak power dissipation with a 10/1000μs  
waveform (Note 1)  
PPP  
400  
Watts  
Peak pulse current with a 10/1000μs  
IPP  
PD  
See Next Table  
A
Watts  
A
waveform (Note 1)  
Power dissipation on infinite heatsink at  
TL=75°C  
1.0  
40  
Peak forward surge current, 8.3ms single  
half sine-wave, uni-directional only (Note 2)  
IFSM  
VF  
Maximum instantaneous forward voltage  
at 25.0A for uni-directional only (Note 3)  
3.5/5.0  
V
Operating junction temperature range  
Storage temperature range  
TJ  
-55 to +150  
-55 to +150  
°C  
°C  
TSTG  
Notes:  
1. Non-repetitive current pulse per Fig.5 and derated above TA=25°C per Fig.1  
2. Measured on 8.3ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum.  
3. VF<3.5V for devices of VBR<200V and VF<5.0V for devices of VBR>201V  
REV:A  
Page 1  
QW-BTV21  
Comchip Technology CO., LTD.  

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