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TV04A850JB-G PDF预览

TV04A850JB-G

更新时间: 2024-11-19 13:15:03
品牌 Logo 应用领域
上华 - COMCHIP /
页数 文件大小 规格书
4页 106K
描述
Transient Suppressor,

TV04A850JB-G 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:R-PDSO-C2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.78Is Samacsys:N
其他特性:EXCELLENT CLAMPING CAPABILITY, UL RECOGNIZED最大击穿电压:104 V
最小击穿电压:94.4 V配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码:DO-214ACJESD-30 代码:R-PDSO-C2
最大非重复峰值反向功率耗散:400 W元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性:BIDIRECTIONAL
最大功率耗散:1 W最大重复峰值反向电压:85 V
表面贴装:YES技术:AVALANCHE
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:30Base Number Matches:1

TV04A850JB-G 数据手册

 浏览型号TV04A850JB-G的Datasheet PDF文件第2页浏览型号TV04A850JB-G的Datasheet PDF文件第3页浏览型号TV04A850JB-G的Datasheet PDF文件第4页 
SMD Transient Voltage Suppressor  
CCOOMMCCHHIIPP  
www.comchip.com.tw  
TV04A5V0 Thru TV04A171  
Working Peak Reverse Voltage: 5.0 - 170 Volts  
Power Dissipation: 400 Watts  
Features  
DO-214AC (SMA)  
Ideal for surface mount applications  
Easy pick and place  
Plastic package has Underwriters Lab.  
0.067(1.70)  
0.110(2.79)  
0.086(2.18)  
flammability classification 94V-0  
0.051(1.29)  
Typical IR less than 1uA above 10V  
0.180(4.57)  
0.160(4.06)  
Fast reponse time: typically less 1nS for  
uni-direction, less than 5nS for bi-  
directiona, from 0 V to BV min.  
0.012(0.31)  
0.006(0.15)  
0.091(2.31)  
0.067(1.70)  
Mechanical data  
0.008(0.20)  
0.004(0.10)  
0.059(1.50)  
0.035(0.89)  
Case: JEDEC DO-214AC molded plastic  
0.209(5.31)  
0.185(4.70)  
Terminals: solderable per MIL-STD-750,  
method 2026  
Polarity: Cathode band denoted  
Mounting position: Any  
Dimensions in inches and (millimeters)  
Approx. weight:0.064 gram  
Maximum Ratings and Electrical Characterics  
Rating at 25 C ambient temperature unless otherwise specified.  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
Value  
Symbol  
Units  
Characteristics  
Peak Power Dissipationon 10/1000uS  
400  
See Table 1  
1.0  
Waveform (Note 1, Fig. 1)  
PPPM  
Watts  
Peak Pulse Currentof on 10/1000uS  
Waveform (Note 1, Fig. 3)  
A
IPPM  
PM(AV)  
Steady State PowerDissipation at  
TL=75 C (Note2)  
Watts  
Peak Forfard SurgeCurrent, 8.3mS Single  
Half Sine-Wave Superimposed on Rated  
Load, Uni-Directional Only(Note 3)  
IFSM  
40  
A
Maxinum Instantaneous ForwardVoltage  
at 25.0A forUni-Directional only  
(Note 3 &4)  
VF  
3.5  
Volts  
Tj  
-55 to +150  
Operation Junction Temperature Range  
C
TSTG  
-55 to +150  
Storage Temperature Range  
C
Note: 1. Non-RepetitiveCurrent Pulse, perFig. 3 andDerated above TA=25 C, perFig. 2.  
2. Mounted on5.0x5.0mm Copper Padsto Each Terminal.  
3. Lead Temperature at TL=75C per Fig. 5  
4. Measured on8.3 mS SingleHalf Sine-Wave for Uni-Directional DevicesOnly.  
5. Peak PulsePower Waveform is 10/1000uS.  
Page 1  
MDS0211009A  

TV04A850JB-G 替代型号

型号 品牌 替代类型 描述 数据表
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