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TV04A8V5JB-G PDF预览

TV04A8V5JB-G

更新时间: 2024-11-19 16:12:23
品牌 Logo 应用领域
上华 - COMCHIP 局域网光电二极管
页数 文件大小 规格书
7页 136K
描述
Transient Suppressor,

TV04A8V5JB-G 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PDSO-C2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.79其他特性:EXCELLENT CLAMPING CAPABILITY, UL RECOGNIZED
最大击穿电压:10.4 V最小击穿电压:9.44 V
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码:DO-214AC
JESD-30 代码:R-PDSO-C2最大非重复峰值反向功率耗散:400 W
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性:BIDIRECTIONAL最大功率耗散:1 W
最大重复峰值反向电压:8.5 V表面贴装:YES
技术:AVALANCHE端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:30
Base Number Matches:1

TV04A8V5JB-G 数据手册

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SMD Transient Voltage Suppressor  
TV04A5V0-G Thru. TV04A441-G  
Working Peak Reverse Voltage: 5.0 to 440 Volts  
Power Dissipation: 400 Watts  
RoHS Device  
Features  
SMA/DO-214AC  
-Ideal for surface mount applications.  
-Easy pick and place.  
0.179(4.55)  
0.162(4.10)  
-Plastic package has Underwriters Lab.  
flammability classification 94V-0.  
0.064(1.63)  
0.049(1.23)  
0.109(2.76)  
0.099(2.51)  
-Typical IR less than 1μA above 10V.  
-Fast response time: typically less than 1nS for  
uni-direction, less than 5nS for bi-direction,  
from 0V to BV min.  
0.206(5.22)  
0.192(4.87)  
0.012(0.30)  
0.006(0.15)  
Mechanical data  
0.089(2.26)  
0.077(1.96)  
-Case: AMA/DO-214AC, molded plastic.  
0.008(0.20) max  
0.060(1.51)  
0.030(0.75)  
-Terminals: solderable per MIL-STD-750,  
method 2026.  
Dimensions in inches and (millimeter)  
-Polarity: Color band denotes cathode end.  
-Approx. weight: 0.064 grams  
Maximum Ratings and Electrical Characteristics  
Ratings at 25 OC ambient temperature unless otherwise specified.  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Symbol  
Characteristics  
Value  
Units  
Peak power dissipation on 10/1000μS  
waveform (Note1)  
PPPM  
400  
W
Peak pulse current on 10/1000μS  
waveform (Note 1)  
IPPM  
See Next Table  
1.0  
A
Steady state power dissipation at TL=75°C  
PM(AV)  
W
Peak forward surge current, 8.3mS single  
half sine-wave unidirectional only (Note 2)  
IFSM  
VF  
40  
A
V
Maximum instantaneous forward voltage  
at 25.0A for unidirectional only (Note 3)  
3.5/5.0  
Maximum operating junction temperature  
Storage temperature range  
TJ  
-55 to +150  
-55 to +150  
°C  
°C  
TSTG  
Notes:  
1. Non-repetitive current pulse, per Fig. 5 and derated above TA=25°C, per Fig. 1.  
2. Measured on 8.3mS single half sine-wave or equare wave,duty cycle=4 pulses per minute maximum.  
3. VF<3.5V for devices of VBR<200V and VF<5.0V for devices of VBR>201V  
REV:D  
Page 1  
QW-BTV01  
Comchip Technology CO., LTD.  

TV04A8V5JB-G 替代型号

型号 品牌 替代类型 描述 数据表
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