TSSS2600
Vishay Semiconductors
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs
FEATURES
• Package type: leaded
• Package form: side view
• Dimensions (L x W x H in mm): 3.6 x 2.2 x 5
• Peak wavelength: λp = 950 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = 25°, horizontal
• Low forward voltage
94 8672
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Package matched with detector TEST2600
DESCRIPTION
• Lead (Pb)-free component in accordance with
RoHS 2002/95/EC and WEEE 2002/96/EC
TSSS2600 is an infrared, 950 nm emitting diode in GaAs
technology, molded in a miniature, clear plastic package with
side view lens.
APPLICATIONS
• Infrared source in miniature light barriers or reflective
sensor systems with short transmission distances and low
forward voltage requirements. Matching with silicon PIN
photodiodes or phototransistors (e.g. TEST2600)
PRODUCT SUMMARY
COMPONENT
Ie (mW/sr)
ϕ (deg)
λp (nm)
tr (ns)
TSSS2600
2.6
25
950
800
Note
Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
PACKAGING
Bulk
REMARKS
PACKAGE FORM
TSSS2600
MOQ: 5000 pcs, 5000 pcs/bulk
Side view
Note
MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
SYMBOL
VALUE
5
UNIT
V
Reverse voltage
VR
IF
Forward current
100
200
2.0
mA
mA
A
Peak forward current
Surge forward current
Power dissipation
tp/T = 0.5, tp = 100 µs
tp = 100 µs
IFM
IFSM
PV
Tj
170
100
mW
°C
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
Tamb
Tstg
- 40 to + 100
- 40 to + 100
260
°C
°C
t ≤ 5 s, 2 mm from case
Tsd
°C
Leads not soldered
RthJA
450
K/W
Note
amb = 25 °C, unless otherwise specified
T
www.vishay.com
244
For technical questions, contact: emittertechsupport@vishay.com
Document Number: 81042
Rev. 1.6, 05-Sep-08