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TSSS2600 PDF预览

TSSS2600

更新时间: 2024-11-23 22:41:55
品牌 Logo 应用领域
威世 - VISHAY 光电二极管
页数 文件大小 规格书
5页 101K
描述
GaAs IR Emitting Diode in Side View Miniature Package

TSSS2600 数据手册

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TSSS2600  
Vishay Telefunken  
GaAs IR Emitting Diode in Side View Miniature Package  
Description  
TSSS2600 is a miniature infrared emitting diode in  
GaAs on GaAs technology, molded in a clear, untinted  
plastic package with cylindrical side view lens.  
The device is spectrally matched to silicon photo-  
diodes and phototransistors.  
Features  
Low forward voltage  
Suitable for DC and high pulse current operation  
Side view emitter for miniature design  
Horizontal angle of half intensity ± 25  
94 8672  
Vertical angle of half intensity ± 60  
Peak wavelength = 950 nm  
p
High reliability  
Good spectral matching to Si photodetectors  
Applications  
Infrared source in miniature light barriers or reflective sensor systems with short transmission distances and low  
forward voltage requirements. Matching with silicon PIN photodiodes or phototransistors (e.g. TEST2600)  
Absolute Maximum Ratings  
T
amb  
= 25 C  
Parameter  
Reverse Voltage  
Test Conditions  
Symbol  
Value  
5
Unit  
V
V
R
Forward Current  
I
100  
200  
2
170  
mA  
mA  
A
mW  
C
C
C
C
K/W  
F
Peak Forward Current  
Surge Forward Current  
Power Dissipation  
Junction Temperature  
Operating Temperature Range  
Storage Temperature Range  
Soldering Temperature  
Thermal Resistance Junction/Ambient  
t /T = 0.5, t = 100 s  
t = 100 s  
p
I
FM  
p
p
I
FSM  
P
T
V
100  
j
T
–55...+100  
–55...+100  
260  
amb  
T
stg  
t
5sec, 2 mm from case  
T
sd  
R
450  
thJA  
Document Number 81042  
Rev. 2, 20-May-99  
www.vishay.de FaxBack +1-408-970-5600  
1 (5)  

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