Datasheet > TSP15N06A

TSP15N06A

更新时间： 2024-04-09 19:03:19

品牌	Logo	应用领域
无锡紫光微 - WUXI UNIGROUP		电子栅
页数	文件大小	规格书
7页	497K
描述
通过采用最先进的沟槽栅工艺技术和完美的结构设计，紫光微电子的MOSFET实现功率密度最大化，从而大幅度降低电流传导过程中的导通功率损耗。同时，电流在芯片元胞当中的流通会更加均匀稳定，其有效

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TSP15N06A 数据手册

TSP15N06A

Wuxi Unigroup Microelectronics Co.,Ltd.

Electrical Characteristics(T_J=25ºC unless otherwise noted)

Value

Typ

Symbol

Parameter

Conditions

Units

Min

Max

STATIC PARAMETERS

BV_DSSDrain-Source Breakdown Voltage

I_D=250µA,V_GS=0V

V_DS=60V, V_GS=0V

T_J=25ºC

I_DSS

Zero Gate Voltage Drain Current

μA

T_J=100ºC

100

±100

I_GSS

Gate-Body Leakage Current

Gate Threshold Voltage

V_DS=0V, V_GS=±20V

V_DS=V_GS, I_D=250µA

V_GS=10V, I_D=50A

V_DS=10V, I_D=50A

V_GS(th)

R_DS(ON)

g_FS

2.5

140

Static Drain-Source On-Resistance

Forward Transconductance

Diode Forward Voltage

mΩ

V_SD

I_S=50A, V_GS=0V

I_S

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS

C_iss

C_oss

C_rss

Input Capacitance

7700

667

Output Capacitance

V_GS=0V, V_DS=30V, f =1MH_Z

Reverse Transfer Capacitance

SWITCHING PARAMETERS

Q_g(10V)

Q_gs

Q_gd

t_D(on)

t_r

Total Gate Charge

138

Gate Source Charge

V_GS=10V,V_DS=30V, I_D=50A

Gate Drain Charge

35.5

Turn-On Delay Time

Turn-On Rise Time

V_GS=10V,V_DS=30V, I_D=50A,

R_G=3Ω

T_D(off)

t_f

Turn-Off Delay Time

105

Turn-Off Fall Time

t_rr

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

I_F=50A, di/dt =500A/μs

Q_rr

110

A. Single pulse width limited by maximum junction temperature.

B. The maximum current rating is package limited.

C. The power dissipation P_Dis based on T_J(MAX)=175ºC , using junction-to-case thermal resistance, and is more useful in setting

the upper dissipation limit for cases where additional heatsinking is used.

V1.0

www.tsinghuaicwx.com

123 4 5 6 7

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