Datasheet > TSP15U50S

TSP15U50S

更新时间： 2022-03-26 08:49:25

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描述
Trench MOS Barrier Schottky Rectifier

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TSP15U50S 数据手册

TSP15U50S

Taiwan Semiconductor

Trench MOS Barrier Schottky Rectifier

FEATURES

- Patented Trench MOS Barrier Schottky technology

- Excellent high temperature stability

- Low forward voltage

- Lower power loss/ High efficiency

- High forward surge capability

- Ideal for automated placement

- Moisture sensitivity level : level 1, per J-STD-020

TO-277A(SMPC)

- Compliant to RoHS Directive 2011/65/EU and

in accordance to WEEE 2002/96/EC

- Halogen-free according to IEC 61249-2-21 definition

MECHANICAL DATA

Case：TO-277A(SMPC)

Molding compound, UL flammability classification rating 94V-0

Base P/N with suffix "G" on packing code - halogen-free, RoHS compliant

Terminal：Matte tin plated leads, solderable per JESD22-B102

Meet JESD 201 class 1A whisker test

Polarity：Indicated by cathode band

Weight： 0.095 gram (approximately)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS(T_A=25^oC unless otherwise noted)

PARAMETER

TSP15U50S

Symbol

UNIT

Marking code

15U50

Maximum repetitive peak reverse voltage

Maximum average forward rectified current

V_RRM

I_F(AV)

Peak forward surge current, 8.3 ms single half sine-wave

superimposed on rated load per diode

I_FSM

V_F

I_R

200

MIN

TYP

0.37

MAX

I_F= 5A

T_J= 25°C

I_F= 7.5A

I_F= 15A

I_F= 5A

0.40

Maximum instantaneous forward voltage

per diode (Note 1)

0.48

0.56

0.26

T_J= 125°C

I_F= 7.5A

I_F= 15A

0.31

0.44

0.50

2000

140

T_J= 25°C

140

^OC/W

^OC

Maximum instantaneous reverse current per diode at

rated reverse voltage

T_J= 125°C

Maximum DC reverse voltage

Typical thermal resistance per diode

Operating temperature range

Storage temperature range

V_DC

R_θjC

T_J

- 40 to + 150

^OC

T_STG

Note1 : Pulse Test with Pulse Width=300μs, 1% Duty Cycle

Version:A13

Document Number：DS_D1309033

12 3

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