Datasheet > TSM7N60CIC0

TSM7N60CIC0

更新时间： 2024-01-21 08:09:07

品牌	Logo	应用领域
TSC		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
7页	605K
描述
600V N-Channel Power MOSFET

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技术参数
数据手册

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TSM7N60CIC0 技术参数

生命周期：	Obsolete	包装说明：	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code：	unknown	HTS代码：	8541.29.00.95
风险等级：	5.84	Is Samacsys：	N
雪崩能效等级（Eas）：	230 mJ	外壳连接：	ISOLATED
配置：	SINGLE WITH BUILT-IN DIODE	最小漏源击穿电压：	600 V
最大漏极电流 (ID)：	7 A	最大漏源导通电阻：	1.2 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JEDEC-95代码：	TO-220AB
JESD-30 代码：	R-PSFM-T3	元件数量：	1
端子数量：	3	工作模式：	ENHANCEMENT MODE
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT	极性/信道类型：	N-CHANNEL
最大脉冲漏极电流 (IDM)：	28 A	认证状态：	Not Qualified
表面贴装：	NO	端子形式：	THROUGH-HOLE
端子位置：	SINGLE	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

TSM7N60CIC0 数据手册

Preliminary

TSM7N60

600V N-Channel Power MOSFET

ITO-220

TO-220

Pin Definition:

1. Gate

PRODUCT SUMMARY

2. Drain

3. Source

V_DS(V)

R_DS(on)(Ω)

I_D(A)

600

1.2 @ V_GS=10V

3.5

General Description

The TSM7N60 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well

suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half

bridge.

Block Diagram

Features

●

Low R_DS(ON)1.2Ω (Max.)

Low gate charge typical @ 28nC (Typ.)

Low Crss typical @ 12pF (Typ.)

Fast Switching

Ordering Information

Part No.

TSM7N60CZ C0

TSM7N60CI C0

Package

TO-220

ITO-220

Packing

50pcs / Tube

N-Channel MOSFET

Absolute Maximum Rating (Ta = 25^oC unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

600

±30

Ta = 25ºC

Continuous Drain Current

I_D

Ta = 100ºC

3.2

Pulsed Drain Current *

I_DM

I_AS

Avalanche Current (Single) (Note 2)

Single Pulse Avalanche Energy (Note 2)

Avalanche Current (Repetitive) (Note 1)

Repetitive Avalanche Energy (Note 1)

Maximum Power Dissipation @Ta = 25^oC

Operating Junction Temperature

E_AS

I_AR

230

7.5

E_AR

P_D

ºC

^oC

T_J

150

Storage Temperature Range

T_STG

-55 to +150

* Limited by maximum junction temperature

1/7

Version: Preliminary

12 3 4 5 6 7

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