Datasheet > TSM7N90CZ

TSM7N90CZ

更新时间： 2024-01-01 22:57:48

品牌	Logo	应用领域
TSC		/
页数	文件大小	规格书
10页	410K
描述
900V N-Channel Power MOSFET

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TSM7N90CZ 数据手册

TSM7N90

900V N-Channel Power MOSFET

TO-220

ITO-220

PRODUCT SUMMARY

Pin Definition:

1. Gate

2. Drain

V_DS(V)

R_DS(on)(Ω)

I_D(A)

3. Source

900

1.9 @ V_GS=10V

3.5

General Description

The TSM7N90 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior

switching performance, and withstand high energy pulse in the avalanche and commutation mode. These

devices are well suited for high efficiency switch mode power supply, electronic lamp ballast based on half

bridge.

Features

Block Diagram

●

Low R_DS(ON)1.9Ω (Max.)

Low gate charge typical @ 49nC (Typ.)

Improve dv/dt capability

Ordering Information

Part No.

TSM7N90CZ C0

TSM7N90CI C0

Package

TO-220

Packing

50pcs / Tube

ITO-220

N-Channel MOSFET

Absolute Maximum Rating (Ta = 25^oC unless otherwise noted)

Parameter

Symbol

V_DS

TO-220

ITO-220

Unit

Drain-Source Voltage

Gate-Source Voltage

900

±30

V_GS

Tc = 25^oC

Tc = 100^oC

7 *

4.31 *

28 *

Continuous Drain Current

Pulsed Drain Current *

I_D

4.31

I_DM

dv/dt

E_AS

I_AR

Peak Diode Recovery dv/dt (Note 3)

Single Pulse Avalanche Energy (Note 2)

Avalanche Current (Repetitive) (Note 1)

Repetitive Avalanche Energy (Note 1)

4.5

106

E_AR

Tc = 25^oC

250

40.3

0.32

Power Dissipation

P_D

Derate above 25℃

ºC/W

ºC

Operating Junction Temperature

T_J

150

Storage Temperature Range

T_STG

-55 to +150

^oC

* Limited by maximum junction temperature

1/10

Version: A12

12 3 4 5 6 7...10

中文翻译

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