Datasheet > TSM80N08_1307

TSM80N08_1307

更新时间： 2024-01-14 01:00:02

品牌	Logo	应用领域
TSC		/
页数	文件大小	规格书
6页	392K
描述
75V N-Channel Power MOSFET

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数据手册

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TSM80N08_1307 数据手册

TSM80N08

75V N-Channel Power MOSFET

TO-220

PRODUCT SUMMARY

Pin Definition:

1. Gate

V_DS(V)

R_DS(on)(mΩ)

I_D(A)

2. Drain

3. Source

8 @ V_GS=10V

Features

Block Diagram

●

Advanced Trench Technology

Low R_DS(ON)8mΩ (Max.)

Low gate charge typical @ 91.5nC (Typ.)

Low Crss typical @ 203pF (Typ.)

Ordering Information

Part No. Package

Packing

TSM80N08CZ C0

TO-220

50pcs / Tube

N-Channel MOSFET

Absolute Maximum Rating (Ta = 25 C unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

T_C=25°C

V_DS

V_GS

T_C=70°C

Continuous Drain Current

T_A=25°C

I_D

T_A=70°C

Drain Current-Pulsed Note 1

Avalanche Current, L=0.3mH

Avalanche Energy, L=0.3mH

T_C=25°C

320

I_DM

I_AS

E_AS

183

113.6

72.7

T_C=70°C

Maximum Power Dissipation

T_A=25°C

P_D

T_A=70°C

1.3

Storage Temperature Range

T_STG

T_J

-55 to +150

°C

Operating Junction Temperature Range

* Limited by maximum junction temperature

Thermal Performance

Parameter

Symbol

RӨ_JC

Limit

1.1

Unit

Thermal Resistance - Junction to Case

Thermal Resistance - Junction to Ambient

Notes: Surface mounted on FR4 board t ≤ 10sec

C/W

RӨ_JA

62.5

C/W

1/6

Version: B13

12 3 4 5 6

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