Datasheet > TSM8N50

TSM8N50

更新时间： 2024-02-06 05:50:36

品牌	Logo	应用领域
TSC		/
页数	文件大小	规格书
7页	214K
描述
500V N-Channel MOSFET

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中文翻译

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数据手册

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TSM8N50 数据手册

TSM8N50

500V N-Channel MOSFET

TO-251

(IPAK)

TO-252

(DPAK)

PRODUCT SUMMARY

Pin Definition:

1. Gate

2. Drain

V_DS(V)

R_DS(on)(Ω)

I_D(A)

3. Source

500

0.85 @ V_GS=10V

7.2

Features

Block Diagram

●

Low On-Resistance.

High power and current handing capability.

●

Ordering Information

Part No.

Package

Packing

75pcs / Tube

TSM8N50CH C5G

TO-251

TSM8N50CP ROG

Note: “G” denotes for Halogen Free

TO-252

2.5Kpcs / 13” Reel

N-Channel MOSFET

Absolute Maximum Rating (Tc = 25^oC unless otherwise noted)

Parameter

Symbol

Limit

500

Unit

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

±30

Tc = 25ºC

7.2

Continuous Drain Current

I_D

Tc = 100ºC

4.3

Pulsed Drain Current ^{(Note 1)}

I_DM

E_AS

P_TOT

T_J

28.8

Single Pulse Avalanche Energy ^{(Note 2)}

Total Power Dissipation @ T_C= 25^oC

Operating Junction Temperature

Storage Temperature Range

181

ºC

^oC

150

T_STG

-55 to +150

Note1: Repetitive Rating : Pulse width limited by maximum junction temperature.

Note2: L=7mH, I_AS=8A, V_DD= 50V, V_DS= 200V, Starting T_J= 25℃

Thermal Performance

Parameter

Symbol

RӨ_JC

Limit

1.4

Unit

Thermal Resistance - Junction to Case

Thermal Resistance - Junction to Ambient

^oC/W

RӨ_JA

1/7

Version: A12

12 3 4 5 6 7

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