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TSM120N10PQ56 PDF预览

TSM120N10PQ56

更新时间: 2024-11-04 01:22:23
品牌 Logo 应用领域
TSC /
页数 文件大小 规格书
6页 655K
描述
100V N-Channel MOSFET

TSM120N10PQ56 数据手册

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TSM120N10PQ56  
100V N-Channel MOSFET  
PDFN56  
Key Parameter Performance  
Pin Definition:  
1. Source  
2. Source  
3. Source  
4. Gate  
8. Drain  
Parameter  
VDS  
Value  
100  
Unit  
V
7. Drain  
6. Drain  
5. Drain  
RDS(on)(max)  
Qg  
12  
m  
nC  
145  
Features  
Block Diagram  
Low On-Resistance  
Low Input Capacitance  
Low Gate Charge  
Ordering Information  
Part No.  
Package  
Packing  
TSM120N10PQ56 RLG  
PDFN56  
2.5kpcs / 13” Reel  
Note: “G” denotes for Halogen- and Antimony-free as those which contain  
<900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and  
<1000ppm antimony compounds.  
N-Channel MOSFET  
Absolute Maximum Ratings (Tc=25oC unless otherwise noted)  
Parameter  
Symbol  
Limit  
Unit  
V
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
VGS  
100  
±20  
V
TC=25°C  
Continuous Drain Current (Note 3)  
TA=25°C  
58  
16.1  
ID  
A
Drain Current-Pulsed (Note 1)  
IDM  
150  
A
Single Pulse Avalanche Energy, L=0.5mH  
EAS  
156  
mJ  
TC=25°C  
Maximum Power Dissipation (Note 2)  
TA=25°C  
36  
PD  
W
2
Storage Temperature Range  
TSTG  
TJ  
-55 to +150  
-55 to +150  
°C  
°C  
Operating Junction Temperature Range  
Thermal Performance  
Parameter  
Symbol  
RӨJC  
Limit  
1.2  
Unit  
oC/W  
oC/W  
Thermal Resistance - Junction to Case  
Thermal Resistance - Junction to Ambient  
RӨJA  
62  
1/6  
Version: A14  

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