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TSM100N06 PDF预览

TSM100N06

更新时间: 2024-11-06 12:49:27
品牌 Logo 应用领域
TSC /
页数 文件大小 规格书
6页 611K
描述
60V N-Channel Power MOSFET

TSM100N06 数据手册

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TSM100N06  
60V N-Channel Power MOSFET  
TO-220  
Pin Definition:  
1. Gate  
2. Drain  
PRODUCT SUMMARY  
VDS (V)  
RDS(on)(m)  
ID (A)  
3. Source  
60  
6.7 @ VGS =10V  
100  
Features  
Block Diagram  
Advanced Trench Technology  
Low RDS(ON) 6.7m(Max.)  
Low gate charge typical @ 81nC (Typ.)  
Low Crss typical @ 339pF (Typ.)  
Ordering Information  
Part No.  
Package  
Packing  
TSM100N06CZ C0  
TO-220  
50pcs / Tube  
N-Channel MOSFET  
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)  
Parameter  
Symbol  
Limit  
Unit  
V
Drain-Source Voltage  
Gate-Source Voltage  
TC=25°C  
VDS  
VGS  
60  
±20  
100(3)  
V
TC=70°C  
80  
Continuous Drain Current  
TA=25°C  
ID  
A
14  
TA=70°C  
Drain Current-Pulsed Note 1  
Avalanche Current, L=0.1mH  
Avalanche Energy, L=0.1mH  
TC=25°C  
11  
IDM  
IAS  
400  
A
A
71  
400  
EAS, EAR  
mJ  
167  
TC=70°C  
Maximum Power Dissipation  
107  
PD  
W
TA=25°C  
2
TA=70°C  
Storage Temperature Range  
1.3  
TSTG  
TJ  
-55 to +150  
-55 to +150  
°C  
°C  
Operating Junction Temperature Range  
* Limited by maximum junction temperature  
Thermal Performance  
Parameter  
Symbol  
RӨJC  
Limit  
0.8  
Unit  
oC/W  
oC/W  
Thermal Resistance - Junction to Case  
Thermal Resistance - Junction to Ambient  
RӨJA  
62.5  
Notes: Surface mounted on FR4 board t 10sec  
1/6  
Version: A12  

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