Datasheet > TSHA650

TSHA650

更新时间： 2024-09-26 22:33:11

品牌	Logo	应用领域
威世 - VISHAY		二极管
页数	文件大小	规格书
6页	90K
描述
GaAlAs Infrared Emitting Diodes in ?5 mm (T-13/4) Package

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TSHA650 数据手册

TSHA650.

Vishay Telefunken

GaAlAs Infrared Emitting Diodes in ø 5 mm (T–1 )

Package

94 8389

Description

The TSHA650. series are high efficiency infrared emit-

ting diodes in GaAlAs on GaAlAs technology, molded

in a clear, untinted plastic package.

In comparison with the standard GaAs on GaAs

technology these high intensity emitters feature about

70 % radiant power improvement.

In contrast to the TSHA550. series lead stand–offs are

omitted.

Features

Extra high radiant power

Suitable for high pulse current operation

Standard T–1 (ø 5 mm) package

Leads formed without stand–off

Angle of half intensity ϕ = ± 24

Peak wavelength = 875 nm

High reliability

Good spectral matching to Si photodetectors

Applications

Infrared remote control and free air transmission systems with high power and comfortable radiation angle re-

quirements in combination with PIN photodiodes or phototransistors.

Because of the reduced radiance absorption in glass at the wavelength of 875 nm, this emitter series is also

suitable for systems with panes in the transmission range between emitter and detector.

Absolute Maximum Ratings

amb

= 25 C

Parameter

Reverse Voltage

Test Conditions

Symbol

Value

Unit

Forward Current

100

200

2.5

210

K/W

Peak Forward Current

Surge Forward Current

Power Dissipation

Junction Temperature

Operating Temperature Range

Storage Temperature Range

Soldering Temperature

Thermal Resistance Junction/Ambient

t /T = 0.5, t = 100 s

t = 100 s

FSM

100

–55...+100

260

amb

stg

5sec, 2 mm from case

350

thJA

Document Number 81022

Rev. 3, 20-May-99

www.vishay.de • FaxBack +1-408-970-5600

1 (6)

12 3 4 5 6

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TSHA6501	VISHAY	获取价格	Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs
TSHA6501-AS12	VISHAY	获取价格	Infrared LED, 875nm
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