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TSHA6503-ES21 PDF预览

TSHA6503-ES21

更新时间： 2023-06-15 00:00:00
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
6页 121K
描述
Infrared LED, 875nm

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TSHA6503-ES21 数据手册

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TSHA6500, TSHA6501, TSHA6502, TSHA6503  
Vishay Semiconductors  
Infrared Emitting Diode, 875 nm, GaAlAs  
FEATURES  
• Package type: leaded  
• Package form: T-1¾  
• Dimensions (in mm): Ø 5  
• Peak wavelength: λp = 875 nm  
• High reliability  
• Angle of half intensity: ϕ = 2ꢀ4  
• Low forward voltage  
• Suitable for high pulse current operation  
• Good spectral matching with Si photodetectors  
• Compliant to RoHS directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
9ꢀ 8389  
• Halogen-free according to IEC 612ꢀ9-2-21 definition  
DESCRIPTION  
APPLICATIONS  
The TSHA650. series are infrared, 875 nm emitting diodes in  
GaAlAs technology, molded in a clear, untinted plastic  
package.  
• Infrared remote control and free air data transmission  
systems with comfortable radiation angle  
• This emitter series is dedicated to systems with panes in  
transmission space between emitter and detector,  
because of the low absorbtion of 875 nm radiation in glass  
PRODUCT SUMMARY  
COMPONENT  
TSHA6500  
TSHA6501  
TSHA6502  
TSHA6503  
Ie (mW/sr)  
ϕ (deg)  
2ꢀ  
λ
P (nm)  
875  
tr (ns)  
600  
20  
25  
30  
35  
2ꢀ  
875  
600  
2ꢀ  
875  
600  
2ꢀ  
875  
600  
Note  
Test conditions see table “Basic Characteristics”  
ORDERING INFORMATION  
ORDERING CODE  
PACKAGING  
REMARKS  
PACKAGE FORM  
TSHA6500  
Bulk  
Bulk  
Bulk  
Bulk  
MOQ: ꢀ000 pcs, ꢀ000 pcs/bulk  
MOQ: ꢀ000 pcs, ꢀ000 pcs/bulk  
MOQ: ꢀ000 pcs, ꢀ000 pcs/bulk  
MOQ: ꢀ000 pcs, ꢀ000 pcs/bulk  
T-1¾  
T-1¾  
T-1¾  
T-1¾  
TSHA6501  
TSHA6502  
TSHA6503  
Note  
MOQ: minimum order quantity  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
TEST CONDITION  
SYMBOL  
VALUE  
UNIT  
Reverse voltage  
VR  
IF  
5
100  
V
mA  
mA  
A
Forward current  
Peak forward current  
tp/T = 0.5, tp = 100 µs  
tp = 100 µs  
IFM  
IFSM  
PV  
200  
Surge forward current  
Power dissipation  
2.5  
180  
mW  
4C  
Junction temperature  
Operating temperature range  
Storage temperature range  
Soldering temperature  
Tj  
100  
Tamb  
Tstg  
Tsd  
- ꢀ0 to + 85  
- ꢀ0 to + 100  
260  
4C  
4C  
t ≤ 5 s, 2 mm from case  
4C  
Thermal resistance junction/ambient  
Note  
amb = 25 4C, unless otherwise specified  
J-STD-051, leads 7 mm, soldered on PCB  
RthJA  
230  
K/W  
T
Document Number: 81022  
Rev. 1.9, 25-Jun-09  
For technical questions, contact: emittertechsupport@vishay.com  
www.vishay.com  
1
123456

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