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TSHA6503-CS21 PDF预览

TSHA6503-CS21

更新时间: 2024-01-31 09:12:17
品牌 Logo 应用领域
威世 - VISHAY 半导体
页数 文件大小 规格书
6页 117K
描述
Infrared LED, 875nm

TSHA6503-CS21 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:unknown风险等级:5.84
最大正向电流:0.1 A最大正向电压:1.8 V
安装特点:THROUGH HOLE MOUNT最高工作温度:100 °C
最低工作温度:-55 °C峰值波长:875 nm
最大反向电压:5 V半导体材料:GaAlAs
光谱带宽:8e-8 m子类别:Infrared LEDs
表面贴装:NO视角:48 deg
Base Number Matches:1

TSHA6503-CS21 数据手册

 浏览型号TSHA6503-CS21的Datasheet PDF文件第2页浏览型号TSHA6503-CS21的Datasheet PDF文件第3页浏览型号TSHA6503-CS21的Datasheet PDF文件第4页浏览型号TSHA6503-CS21的Datasheet PDF文件第5页浏览型号TSHA6503-CS21的Datasheet PDF文件第6页 
TSHA650.  
Vishay Semiconductors  
High Speed Infrared Emitting Diode, 870 nm,  
GaAlAs Double Hetero  
Description  
The TSHA650. series are high efficiency infrared  
emitting diodes in GaAlAs on GaAlAs technology,  
molded in a clear, untinted plastic package.  
In comparison with the standard GaAs on GaAs tech-  
nology these high intensity emitters feature about  
70 % radiant power improvement.  
In contrast to the TSHA550. series lead stand-offs are  
omitted.  
94 8389  
Features  
Applications  
• Extra high radiant power  
• Infrared remote control and free air transmission  
systems with high power and comfortable radia-  
tion angle requirements in combination with PIN  
photodiodes or phototransistors.  
• Suitable for high pulse current operation  
• Standard T-1¾ (5 mm) package  
• Leads formed without stand-off  
• Angle of half intensity ϕ = 24ꢀ  
• Peak wavelength λ = 875 nm  
• High reliability  
e2  
• Because of the reduced radiance absorption in  
glass at the wavelength of 875 nm, this emitter  
series is also suitable for systems with panes in  
the transmission range between emitter and  
detector.  
p
• Good spectral matching to Si photodetectors  
• Lead (Pb)-free component  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
Absolute Maximum Ratings  
Tamb = 25 ꢀC, unless otherwise specified  
Parameter  
Reverse voltage  
Test condition  
Symbol  
VR  
Value  
Unit  
V
5
100  
IF  
IFM  
IFSM  
PV  
Forward current  
mA  
mA  
A
tp/T = 0.5, tp = 100 µs  
tp = 100 µs  
Peak forward current  
Surge forward current  
Power dissipation  
200  
2.5  
210  
mW  
ꢀC  
Tj  
Junction temperature  
Operating temperature range  
Storage temperature range  
Soldering temperature  
100  
Tamb  
Tstg  
Tsd  
- 55 to + 100  
- 55 to + 100  
260  
ꢀC  
ꢀC  
t 5 sec, 2 mm from case  
ꢀC  
Thermal resistance junction/  
ambient  
RthJA  
350  
K/W  
Document Number 81022  
Rev. 1.6, 28-Nov-06  
www.vishay.com  
1

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