TSHA6500, TSHA6501, TSHA6502, TSHA6503
Vishay Semiconductors
Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• Peak wavelength: λp = 875 nm
• High reliability
• Angle of half intensity: ϕ = 2ꢀ°
• Low forward voltage
• Suitable for high pulse current operation
9ꢀ 8389
• Good spectral matching with Si photodetectors
• Lead (Pb)-free component in accordance with
RoHS 2002/95/EC and WEEE 2002/96/EC
DESCRIPTION
APPLICATIONS
• Infrared remote control and free air data transmission
systems with comfortable radiation angle
The TSHA650. series are infrared, 875 nm emitting diodes in
GaAlAs technology, molded in a clear, untinted plastic
package.
• This emitter series is dedicated to systems with panes in
transmission space between emitter and detector,
because of the low absorbtion of 875 nm radiation in glass
PRODUCT SUMMARY
COMPONENT
TSHA6500
TSHA6501
TSHA6502
TSHA6503
Ie (mW/sr)
ϕ (deg)
2ꢀ
λ
P (nm)
875
tr (ns)
600
20
25
30
35
2ꢀ
875
600
2ꢀ
875
600
2ꢀ
875
600
Note
Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
PACKAGING
REMARKS
PACKAGE FORM
TSHA6500
Bulk
Bulk
Bulk
Bulk
MOQ: ꢀ000 pcs, ꢀ000 pcs/bulk
MOQ: ꢀ000 pcs, ꢀ000 pcs/bulk
MOQ: ꢀ000 pcs, ꢀ000 pcs/bulk
MOQ: ꢀ000 pcs, ꢀ000 pcs/bulk
T-1¾
T-1¾
T-1¾
T-1¾
TSHA6501
TSHA6502
TSHA6503
Note
MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
Reverse voltage
VR
IF
5
V
mA
mA
A
Forward current
100
200
2.5
180
Peak forward current
Surge forward current
Power dissipation
tp/T = 0.5, tp = 100 µs
tp = 100 µs
IFM
IFSM
PV
mW
www.vishay.com
166
For technical questions, contact: emittertechsupport@vishay.com
Document Number: 81022
Rev. 1.7, 05-Sep-08