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TSHA5200-ASZ PDF预览

TSHA5200-ASZ

更新时间: 2024-11-18 13:14:59
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
6页 92K
描述
Infrared LED, LAMP,IRED,875NM PEAK WAVELENGTH,LED-2B

TSHA5200-ASZ 技术参数

生命周期:ActiveReach Compliance Code:unknown
风险等级:5.67最大正向电流:0.1 A
最大正向电压:1.8 V安装特点:THROUGH HOLE MOUNT
最高工作温度:100 °C最低工作温度:-55 °C
光电设备类型:INFRARED LED峰值波长:875 nm
最大反向电压:5 V半导体材料:GaAlAs
光谱带宽:8e-8 m子类别:Infrared LEDs
表面贴装:NO视角:24 deg
Base Number Matches:1

TSHA5200-ASZ 数据手册

 浏览型号TSHA5200-ASZ的Datasheet PDF文件第2页浏览型号TSHA5200-ASZ的Datasheet PDF文件第3页浏览型号TSHA5200-ASZ的Datasheet PDF文件第4页浏览型号TSHA5200-ASZ的Datasheet PDF文件第5页浏览型号TSHA5200-ASZ的Datasheet PDF文件第6页 
TSHA520.  
Vishay Telefunken  
GaAlAs Infrared Emitting Diodes in ø 5 mm (T–1 )  
Package  
Description  
94 8390  
The TSHA520. series are high efficiency infrared emit-  
ting diodes in GaAlAs on GaAlAs technology, molded  
in a clear, untinted plastic package.  
In comparison with the standard GaAs on GaAs  
technology these high intensity emitters feature about  
70 % radiant power improvement.  
Features  
Extra high radiant power and radiant intensity  
Suitable for high pulse current operation  
Standard T–1 (ø 5 mm) package  
Angle of half intensity ϕ = ± 12  
Peak wavelength = 875 nm  
p
High reliability  
Good spectral matching to Si photodetectors  
Applications  
Infrared remote control and free air transmission systems with high power and long transmission distance re-  
quirements in combination with PIN photodiodes or phototransistors.  
Because of the reduced radiance absorption in glass at the wavelength of 875 nm, this emitter series is also  
suitable for systems with panes in the transmission range between emitter and detector.  
Absolute Maximum Ratings  
T
amb  
= 25 C  
Parameter  
Reverse Voltage  
Test Conditions  
Symbol  
Value  
5
Unit  
V
V
R
Forward Current  
I
100  
200  
2.5  
210  
mA  
mA  
A
mW  
C
C
C
C
K/W  
F
Peak Forward Current  
Surge Forward Current  
Power Dissipation  
Junction Temperature  
Operating Temperature Range  
Storage Temperature Range  
Soldering Temperature  
Thermal Resistance Junction/Ambient  
t /T = 0.5, t = 100 s  
t = 100 s  
p
I
FM  
p
p
I
FSM  
P
T
V
100  
j
T
–55...+100  
–55...+100  
260  
amb  
T
stg  
t
5sec, 2 mm from case  
T
sd  
R
350  
thJA  
Document Number 81019  
Rev. 2, 20-May-99  
www.vishay.de FaxBack +1-408-970-5600  
1 (6)  

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