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TSHA5200-ES12 PDF预览

TSHA5200-ES12

更新时间: 2024-11-19 06:36:11
品牌 Logo 应用领域
威世 - VISHAY 光电半导体
页数 文件大小 规格书
5页 101K
描述
Infrared LED, LAMP,IRED,875NM PEAK WAVELENGTH,LED-2B

TSHA5200-ES12 技术参数

生命周期:ActiveReach Compliance Code:unknown
风险等级:5.67最大正向电流:0.1 A
最大正向电压:1.8 V安装特点:THROUGH HOLE MOUNT
最高工作温度:85 °C最低工作温度:-40 °C
光电设备类型:INFRARED LED峰值波长:875 nm
最大反向电压:5 V半导体材料:GaAlAs
光谱带宽:8e-8 m子类别:Infrared LEDs
表面贴装:NO视角:24 deg
Base Number Matches:1

TSHA5200-ES12 数据手册

 浏览型号TSHA5200-ES12的Datasheet PDF文件第2页浏览型号TSHA5200-ES12的Datasheet PDF文件第3页浏览型号TSHA5200-ES12的Datasheet PDF文件第4页浏览型号TSHA5200-ES12的Datasheet PDF文件第5页 
TSHA5200, TSHA5201, TSHA5202, TSHA5203  
Vishay Semiconductors  
Infrared Emitting Diode, 875 nm, GaAlAs  
FEATURES  
• Package type: leaded  
• Package form: T-1¾  
• Dimensions (in mm): Ø 5  
• Leads with stand-off  
• Peak wavelength: λp = 875 nm  
• High reliability  
• Angle of half intensity: ϕ = 12ꢀ  
• Low forward voltage  
• Suitable for high pulse current operation  
94 8390  
• Compliant to RoHS directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
• Halogen-free according to IEC 61249-2-21 definition  
DESCRIPTION  
APPLICATIONS  
• Infrared remote control and free air data transmission  
systems  
• This emitter series is dedicated to systems with panes in  
transmission space between emitter and detector,  
because of the low absorbtion of 875 nm radiation in glass  
The TSHA520. series are infrared, 875 nm emitting diodes in  
GaAlAs technology, molded in a clear, untinted plastic  
package.  
PRODUCT SUMMARY  
COMPONENT  
TSHA5200  
TSHA5201  
TSHA5202  
TSHA5203  
Ie (mW/sr)  
ϕ (deg)  
12  
λ
P (nm)  
875  
tr (ns)  
600  
40  
50  
60  
65  
12  
875  
600  
12  
875  
600  
12  
875  
600  
Note  
Test conditions see table “Basic Characteristics”  
ORDERING INFORMATION  
ORDERING CODE  
PACKAGING  
REMARKS  
PACKAGE FORM  
TSHA5200  
Bulk  
Bulk  
Bulk  
Bulk  
MOQ: 4000 pcs, 4000 pcs/bulk  
MOQ: 4000 pcs, 4000 pcs/bulk  
MOQ: 4000 pcs, 4000 pcs/bulk  
MOQ: 4000 pcs, 4000 pcs/bulk  
T-1¾  
T-1¾  
T-1¾  
T-1¾  
TSHA5201  
TSHA5202  
TSHA5203  
Note  
MOQ: minimum order quantity  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
TEST CONDITION  
SYMBOL  
VALUE  
UNIT  
Reverse voltage  
VR  
IF  
5
100  
V
mA  
mA  
A
Forward current  
Peak forward current  
tp/T = 0.5, tp = 100 µs  
tp = 100 µs  
IFM  
IFSM  
PV  
200  
Surge forward current  
Power dissipation  
2.5  
180  
mW  
ꢀC  
Junction temperature  
Operating temperature range  
Storage temperature range  
Soldering temperature  
Tj  
100  
Tamb  
Tstg  
Tsd  
- 40 to + 85  
- 40 to + 100  
260  
ꢀC  
ꢀC  
t 5 s, 2 mm from case  
ꢀC  
Thermal resistance junction/ambient  
Note  
amb = 25 ꢀC, unless otherwise specified  
J-STD-051, leads 7 mm, soldered on PCB  
RthJA  
230  
K/W  
T
Document Number: 81019  
Rev. 1.9, 29-Jun-09  
For technical questions, contact: emittertechsupport@vishay.com  
www.vishay.com  
1

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