Datasheet > TSG25N120CN

TSG25N120CN

更新时间： 2024-11-26 01:15:51

品牌	Logo	应用领域
TSC		双极性晶体管
页数	文件大小	规格书
9页	417K
描述
N-Channel IGBT with FRD.

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中文翻译

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数据手册

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TSG25N120CN 数据手册

TSG25N120CN

N-Channel IGBT with FRD.

TO-3PN

Pin Definition:

1. Gate

PRODUCT SUMMARY

2. Collector

3. Emitter

V_CES(V)

V_GES(V)

I_C(A)

1200

±20

General Description

The TSG25N120CN using proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers

superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This

device is well suited for the resonant or soft switching application such as induction heating, microwave oven,

etc.

Features

Block Diagram

●

1200V NPT Trench Technology

High Speed Switching

Low Conduction Loss

Ordering Information

Part No.

Package

Packing

TSG25N120CN C0

TO-3PN

30pcs / Tube

NPT Trench IGBT

Absolute Maximum Rating (T_A=25^oC unless otherwise noted)

Parameter

Symbol

V_CES

Limit

Unit

Collector-Emitter Voltage

Gate-Emitter Voltage

1200

V_GES

±20

T_C=25^oC

Continuous Current

I_C

T_C=100^oC

Pulsed Collector Current *

I_CM

I_F

Diode Forward Current (T_C=100℃)

Diode Pulse Forward Current

I_FM

T_J=25^oC

Max Power Dissipation

312

P_D

T_J=100^oC

125

Operating Junction Temperature

T_J

-55 to +150

ºC

^oC

Storage Temperature Range

T_STG

* Repetitive rating: Pulse width limited by max. junction temperature

1/9

Version: B12

12 3 4 5 6 7...9

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