Datasheet > TSG60N100CE

TSG60N100CE

更新时间： 2024-11-26 01:15:51

品牌	Logo	应用领域
TSC		双极性晶体管
页数	文件大小	规格书
9页	431K
描述
N-Channel IGBT with FRD

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TSG60N100CE 数据手册

TSG60N100CE

N-Channel IGBT with FRD.

TO-264

Pin Definition:

1. Gate

PRODUCT SUMMARY

2. Collector

3. Emitter

V_CES(V)

V_GES(V)

I_C(A)

1000

±20

General Description

The TSG60N100CE using proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers

superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This

device is well suited for the resonant or soft switching application such as induction heating, microwave oven,

etc.

Features

Block Diagram

●

1000V NPT Trench Technology

High Speed Switching

Low Conduction Loss

Ordering Information

Part No.

Package

Packing

TSG60N100CE C0

TO-264

25pcs / Tube

NPT Trench IGBT

Absolute Maximum Rating (T_A=25^oC unless otherwise noted)

Parameter

Symbol

V_CES

Limit

1000

±20

Unit

Collector-Emitter Voltage

Gate-Emitter Voltage

V_GES

T_C=25^oC

Continuous Current

I_C

T_C=100^oC

Pulsed Collector Current *

I_CM

I_F

200

Diode Continuous Forward Current (T_C=100℃)

T_J=25^oC

Max Power Dissipation

208

P_D

T_J=100^oC

Operating Junction Temperature

T_J

-55 to +150

ºC

^oC

Storage Temperature Range

T_STG

* Repetitive rating: Pulse width limited by max. junction temperature

1/9

Version: B12

12 3 4 5 6 7...9

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