TSP3N80M / TSF3N80M
800V N-Channel MOSFET
General Description
Features
This Power MOSFET is produced using Truesemi‘s
advanced planar stripe DMOS technology.
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3.0A, 800V, RDS(on) = 5.00Ω @VGS = 10 V
Low gate charge ( typical 14nC)
High ruggedness
Fast switching
100% avalanche tested
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction based on half bridge
topology.
Improved dv/dt capability
{D
●
◀
▲
●
●
G
{
TO-220F
TO-220
G D
S
G
D S
{S
Absolute Maximum Ratings
T = 25°Cunless otherwise noted
C
Symbol
VDSS
Parameter
TSP3N80M
TSF3N80M
Units
V
Drain-Source Voltage
800
ID
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
Drain Current
3.0
1.9
12
3.0*
1.9 *
12*
A
A
IDM
(Note 1)
Drain Current
A
VGSS
EAS
EAR
Gate-Source Voltage
± 30
320
10.7
4.5
V
(Note 2)
(Note 1)
(Note 3)
Single Pulsed Avalanche Energy
mJ
mJ
V/ns
W
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
dv/dt
PD
107
39
- Derate above 25°C
Operating and Storage Temperature Range
0.85
0.31
W/°C
°C
TJ, TSTG
TL
-55 to +150
300
Maximum lead temperature for soldering purposes,
°C
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
RθJC
Parameter
TSP3N80M
TSF3N80M
Units
°C/W
°C/W
°C/W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
1.17
0.5
3.2
--
RθCS
RθJA
62.5
62.5
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