TSF40L100C thru TSF40L200C
Taiwan Semiconductor
Trench Schottky Rectifier
FEATURES
- Patented Trench Schottky technology
- Excellent high temperature stability
- Low forward voltage
- Low power loss/ high efficiency
- High forward surge capability
- Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
ITO-220AB
TYPICAL APPLICATIONS
Trench Schottky barrier rectifier are designed for high frequency
miniature switched mode power supplies such as adapters, lighting
and on-board DC/DC converters.
MECHANICAL DATA
Case: ITO-220AB
Molding compound meets UL 94 V-0 flammability rating
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Polarity: As marked
Mounting torque: 0.56 Nm max.
Weight: 1.7 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
TSF40L
100C
100
TSF40L
120C
120
TSF40L
150C
150
TSF40L
200C
200
PARAMETER
SYMBOL
VRRM
UNIT
Maximum repetitive peak reverse voltage
V
A
per device
per diode
40
20
Maximum average forward
rectified current
IF(AV)
Peak forward surge current, 8.3ms single half
sine-wave superimposed on rated load per diode
IFSM
200
A
Voltage rate of change (Rated VR)
10000
dV/dt
V/μs
TYP
MAX
TYP
MAX
TYP
MAX
TYP
MAX
IF = 10A
0.60
0.72
0.54
0.65
-
0.67
0.79
0.58
0.69
-
-
0.77
0.86
0.64
0.74
-
-
0.80
0.88
0.67
0.76
-
-
TJ = 25°C
IF = 20A
IF = 10A
IF = 20A
0.80
-
0.85
-
0.96
-
0.98
Instantaneous forward
voltage per diode (Note1)
VF
V
TJ = 125°C
0.73
250
25
0.77
250
25
0.82
100
15
0.84
100
15
TJ = 25°C
μA
mA
°C/W
°C
Instantaneous reverse current per
diode at rated reverse voltage
IR
TJ = 125°C
10
10
3
3
Typical thermal resistance per diode
Operating junction temperature range
Storage temperature range
RθJC
TJ
3.5
4.5
- 55 to +150
- 55 to +150
TSTG
°C
Note 1: Pulse test with pulse width=300μs, 1% duty cycle
Document Number: DS_D1411083
Version: B14