Datasheet > TSF40L60C

TSF40L60C

更新时间： 2024-11-20 01:18:15

品牌	Logo	应用领域
TSC		/
页数	文件大小	规格书
5页	236K
描述
Trench Schottky Rectifier

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中文翻译

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数据手册

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TSF40L60C 数据手册

TSF40L45C thru TSF40L60C

Taiwan Semiconductor

Trench Schottky Rectifier

FEATURES

- Patented Trench Schottky technology

- Excellent high temperature stability

- Low forward voltage

- Low power loss/ high efficiency

- High forward surge capability

- Compliant to RoHS directive 2011/65/EU and

in accordance to WEEE 2002/96/EC

ITO-220AB

- Halogen-free according to IEC 61249-2-21 definition

TYPICAL APPLICATIONS

Trench Schottky barrier rectifier are designed for high frequency

miniature switched mode power supplies such as adapters, lighting

and on-board DC/DC converters.

MECHANICAL DATA

Case: ITO-220AB

Molding compound meets UL 94 V-0 flammability rating

Packing code with suffix "G" means green compound (halogen-free)

Terminal: Matte tin plated leads, solderable per JESD22-B102

Meet JESD 201 class 2 whisker test

Polarity: As marked

Mounting torque: 0.56 Nm max.

Weight: 1.7 g (approximately)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise noted)

PARAMETER

SYMBOL

V_RRM

TSF40L45C

TSF40L60C

UNIT

Maximum repetitive peak reverse voltage

per device

per diode

Maximum average forward

rectified current

I_F(AV)

Peak forward surge current, 8.3ms single half

sine-wave superimposed on rated load per diode

I_FSM

250

Voltage rate of change (rated V_R)

10000

dV/dt

V/μs

TYP.

MAX.

0.60

0.56

TYP.

MAX.

0.63

0.59

I_F= 20A

T_J= 25°C

T_J= 125°C

T_J= 25°C

T_J= 125°C

0.50

0.46

0.53

0.49

Instantaneous forward

voltage per diode (Note1)

V_F

I_R

Maximum instantaneous reverse

current per diode at rated reverse

voltage

500

100

μA

°C/W

°C

Typical thermal resistance per diode

R_θJC

T_J

Operating junction temperature range

Storage temperature range

- 55 to +150

T_STG

°C

Note 1: Pulse test with pulse width = 300μs, 1% duty cycle

Document Number: DS_D1412002

Version: B14

12 3 4 5

中文翻译

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