Datasheet > TSF40H100C

TSF40H100C

更新时间： 2024-09-25 01:09:23

品牌	Logo	应用领域
TSC		/
页数	文件大小	规格书
5页	365K
描述
Trench Schottky Rectifier

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中文翻译

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TSF40H100C 数据手册

TSF40H100C thru TSF40H200C

Taiwan Semiconductor

Trench Schottky Rectifier

FEATURES

- Patented Trench Schottky technology

- Excellent high temperature stability

- Low forward voltage

- Low power loss/ High efficiency

- High forward surge capability

- Compliant to RoHS directive 2011/65/EU and

in accordance to WEEE 2002/96/EC

- Halogen-free according to IEC 61249-2-21 definition

ITO-220AB

TYPICAL APPLICATIONS

Trench Schottky barrier rectifier are designed for high frequency

miniature switched mode power supplies such as adapters, lighting

and on-board DC/DC converters.

MECHANICAL DATA

Case: ITO-220AB

Molding compound meets UL 94 V-0 flammability rating

Packing code with suffix "G" means green compound (halogen-free)

Terminal: Matte tin plated leads, solderable per JESD22-B102

Meet JESD 201 class 2 whisker test

Polarity: As marked

Mounting torque: 0.56 Nm max.

Weight: 1.7 g (approximately)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise noted)

TSF40H

100C

TSF40H

120C

TSF40H

150C

TSF40H

200C

PARAMETER

SYMBOL

V_RRM

UNIT

Maximum repetitive peak reverse voltage

100

120

150

200

per device

per diode

Maximum average forward rectified

current

I_F(AV)

Peak forward surge current, 8.3 ms single half sine-wave

superimposed on rated load per diode

I_FSM

250

Voltage rate of change (Rated V_R)

dV/dt

10000

V/μs

TYP.

0.56

0.66

0.48

0.59

MAX.

TYP.

MAX.

TYP.

MAX.

TYP.

MAX.

I_F= 10A

0.60

0.74

0.53

0.63

0.71

0.79

0.59

0.67

0.75

0.83

0.62

0.70

T_J= 25°C

V_F

I_R

I_F= 20A

I_F= 10A

I_F= 20A

0.72

0.84

0.89

0.93

Instantaneous forward voltage per

diode ( Note1 )

T_J= 125°C

0.65

500

0.71

500

0.77

150

0.80

150

T_J= 25°C

μA

Instantaneous reverse current per diode at rated

reverse voltage

T_J= 125°C

°C/W

°C

Typical thermal resistance per diode

Operating junction temperature range

Storage temperature range

R_θJC

T_J

- 55 to +150

T_STG

°C

Note 1: Pulse Test with Pulse Width=300μs, 1% Duty Cycle

Document Number: DS_D1411064

Version: B14

12 3 4 5

中文翻译

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