Datasheet > TSD772SCY

TSD772SCY

更新时间： 2024-09-16 03:26:19

品牌	Logo	应用领域
TSC		晶体晶体管
页数	文件大小	规格书
5页	248K
描述
Low Vcesat PNP Transistor

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中文翻译

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数据手册

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TSD772SCY 数据手册

TSB772S

Low Vcesat PNP Transistor

TO-92

SOT-89

Pin Definition:

1. Base

2. Collector

3. Emitter

Pin Definition:

1. Emitter

2. Collector

3. Base

PRODUCT SUMMARY

BV_CBO

BV_CEO

I_C

-50V

-3A

V_CE(SAT)

-0.5V @ I_C/ I_B= -2A / -200mA

Features

Ordering Information

●

Low V_CE(SAT)-0.25 @ I_C/ I_B= 2A / 200mA (Typ.)

Complementary part with TSD882S

Part No.

Package

Packing

●

TSD772SCT B0

TSD772SCT A3

TSD772SCY RM

TO-92

1Kpcs / Bulk

Structure

2Kpcs / Ammo

1Kpcs / 7” Reel

●

Epitaxial Planar Type

PNP Silicon Transistor

SOT-89

●

Absolute Maximum Rating (Ta = 25^oC unless otherwise noted)

Parameter

Symbol

Limit

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

V_CBO

V_CEO

V_EBO

-50

-5

-3

Collector Current

I_C

Pulse

SOT-89

TO-92

-7 (note)

0.75

Collector Power Dissipation

P_D

0.625

+150

Operating Junction Temperature

T_J

^oC

Operating Junction and Storage Temperature Range

T_STG

- 55 to +150

Note: Single pulse, Pw≤350us, Duty≤2%

Electrical Specifications (Ta = 25^oC unless otherwise noted)

Parameter

Conditions

Symbol

BV_CBO

BV_CEO

BV_EBO

I_CBO

Min

Typ

Max

Unit

Collector-Base Breakdown Voltage

I_C= -50uA, I_E= 0

-50

-5

Collector-Emitter Breakdown Voltage I_C= -1mA, I_B= 0

Emitter-Base Breakdown Voltage

Collector Cutoff Current

I_E= -50uA, I_C= 0

V_CB= -30V, I_E= 0

V_EB= 3V, I_C= 0

-1

Emitter Cutoff Current

I_EBO

-1

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

DC Current Transfer Ratio

I_C/ I_B= -2A / -200mA

V_CE= -2V, I_C= -1A

V_CE=-5V, I_C=-100mA,

f=100MHz

*V_CE(SAT)

*V_BE(SAT)

*h_FE

-0.3

-1

-0.5

-2

100

500

Transition Frequency

f_T

MHz

Output Capacitance

V_CB= -10V, f=1MHz

Cob

* Pulse Test: Pulse Width ≤380uS, Duty Cycle≤2%

1/5

Version: A07

12 3 4 5

中文翻译

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