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TSD772SCY PDF预览

TSD772SCY

更新时间: 2024-11-18 03:26:19
品牌 Logo 应用领域
TSC 晶体晶体管
页数 文件大小 规格书
5页 248K
描述
Low Vcesat PNP Transistor

TSD772SCY 数据手册

 浏览型号TSD772SCY的Datasheet PDF文件第2页浏览型号TSD772SCY的Datasheet PDF文件第3页浏览型号TSD772SCY的Datasheet PDF文件第4页浏览型号TSD772SCY的Datasheet PDF文件第5页 
TSB772S  
Low Vcesat PNP Transistor  
TO-92  
SOT-89  
Pin Definition:  
1. Base  
2. Collector  
3. Emitter  
Pin Definition:  
1. Emitter  
2. Collector  
3. Base  
PRODUCT SUMMARY  
BVCBO  
BVCEO  
IC  
-50V  
-50V  
-3A  
VCE(SAT)  
-0.5V @ IC / IB = -2A / -200mA  
Features  
Ordering Information  
Low VCE(SAT) -0.25 @ IC / IB = 2A / 200mA (Typ.)  
Complementary part with TSD882S  
Part No.  
Package  
Packing  
TSD772SCT B0  
TSD772SCT A3  
TSD772SCY RM  
TO-92  
TO-92  
1Kpcs / Bulk  
Structure  
2Kpcs / Ammo  
1Kpcs / 7” Reel  
Epitaxial Planar Type  
PNP Silicon Transistor  
SOT-89  
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)  
Parameter  
Symbol  
Limit  
Unit  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
VCBO  
VCEO  
VEBO  
-50  
-50  
V
-5  
V
DC  
-3  
Collector Current  
IC  
A
Pulse  
SOT-89  
TO-92  
-7 (note)  
0.75  
Collector Power Dissipation  
PD  
W
0.625  
+150  
Operating Junction Temperature  
TJ  
oC  
oC  
Operating Junction and Storage Temperature Range  
TSTG  
- 55 to +150  
Note: Single pulse, Pw350us, Duty2%  
Electrical Specifications (Ta = 25oC unless otherwise noted)  
Parameter  
Conditions  
Symbol  
BVCBO  
BVCEO  
BVEBO  
ICBO  
Min  
Typ  
--  
Max  
--  
Unit  
Collector-Base Breakdown Voltage  
IC = -50uA, IE = 0  
-50  
-50  
-5  
V
V
Collector-Emitter Breakdown Voltage IC = -1mA, IB = 0  
--  
--  
Emitter-Base Breakdown Voltage  
Collector Cutoff Current  
IE = -50uA, IC = 0  
VCB = -30V, IE = 0  
VEB = 3V, IC = 0  
--  
--  
V
--  
--  
-1  
uA  
uA  
V
Emitter Cutoff Current  
IEBO  
--  
--  
-1  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
DC Current Transfer Ratio  
IC / IB = -2A / -200mA  
IC / IB = -2A / -200mA  
VCE = -2V, IC = -1A  
VCE =-5V, IC=-100mA,  
f=100MHz  
*VCE(SAT)  
*VBE(SAT)  
*hFE  
--  
-0.3  
-1  
--  
-0.5  
-2  
--  
V
100  
500  
Transition Frequency  
fT  
--  
--  
80  
55  
--  
--  
MHz  
pF  
Output Capacitance  
VCB = -10V, f=1MHz  
Cob  
* Pulse Test: Pulse Width 380uS, Duty Cycle2%  
1/5  
Version: A07  

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