TSD1760CPRO PDF预览

TSD1760CPRO

更新时间: 2025-07-14 06:02:23
品牌 Logo 应用领域
TSC 晶体晶体管
页数 文件大小 规格书
4页 231K
描述
Low Vcesat NPN Transistor

TSD1760CPRO 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.84Is Samacsys:N
最大集电极电流 (IC):3 A集电极-发射极最大电压:50 V
配置:SINGLE最小直流电流增益 (hFE):82
JEDEC-95代码:TO-252JESD-30 代码:R-PSSO-G2
元件数量:1端子数量:2
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
晶体管元件材料:SILICON标称过渡频率 (fT):90 MHz
Base Number Matches:1

TSD1760CPRO 数据手册

 浏览型号TSD1760CPRO的Datasheet PDF文件第2页浏览型号TSD1760CPRO的Datasheet PDF文件第3页浏览型号TSD1760CPRO的Datasheet PDF文件第4页 
TSD1760  
Low Vcesat NPN Transistor  
TO-252  
(DPAK)  
Pin Definition:  
1. Base  
2. Collector  
3. Emitter  
PRODUCT SUMMARY  
BVCBO  
BVCEO  
IC  
50V  
50V  
3A  
VCE(SAT)  
0.5V @ IC / IB = 2A / 200mA  
Features  
Ordering Information  
Low VCE(SAT) 0.25 @ IC / IB = 2A / 200mA (Typ.)  
Complementary part with TSB1184CP  
Part No.  
Package  
TO-252  
Packing  
TSD1760CP RO  
2.5Kpcs / 13” Reel  
Structure  
Epitaxial Planar Type  
NPN Silicon Transistor  
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)  
Parameter  
Symbol  
Limit  
Unit  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
VCBO  
VCEO  
VEBO  
50  
50  
V
5
3
V
DC  
Collector Current  
IC  
A
Pulse  
7 (note 1)  
1 (note 2)  
15  
Ta=25ºC  
Tc=25ºC  
Power Dissipation  
PD  
W
Operating Junction Temperature  
TJ  
+150  
oC  
oC  
Operating Junction and Storage Temperature Range  
TSTG  
- 55 to +150  
Note: 1. Single pulse, Pw=10mS, Duty2%  
2. PCB 1.7mm thick, collector copper plating 10mm x 10mm or larger.  
Electrical Specifications (Ta = 25oC unless otherwise noted)  
Parameter  
Conditions  
IC = 50uA, IE = 0  
Symbol  
BVCBO  
BVCEO  
BVEBO  
ICBO  
Min  
Typ  
--  
Max  
--  
Unit  
Collector-Base Breakdown Voltage  
50  
50  
5
V
V
Collector-Emitter Breakdown Voltage IC = 1mA, IB = 0  
--  
--  
Emitter-Base Breakdown Voltage  
Collector Cutoff Current  
IE = 50uA, IC = 0  
VCB = 30V, IE = 0  
VEB = 4V, IC = 0  
--  
--  
V
--  
--  
1
uA  
uA  
V
Emitter Cutoff Current  
IEBO  
--  
--  
1
Collector-Emitter Saturation Voltage  
DC Current Transfer Ratio  
IC / IB = 2A / 200mA  
VCE = 2V, IC = 100mA  
VCE =5V, IC=50mA,  
f=100MHz  
*VCE(SAT)  
*hFE  
--  
0.25  
--  
0.5  
560  
82  
Transition Frequency  
Output Capacitance  
fT  
--  
--  
90  
45  
--  
--  
MHz  
pF  
VCB = 10V, f=1MHz  
Cob  
* Pulse Test: Pulse Width 380uS, Duty Cycle2%  
1/4  
Version: A09  

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