Datasheet > TSD18N20M

TSD18N20M

更新时间： 2024-09-14 17:15:35

品牌	Logo	应用领域
信安 - TRUESEMI		/
页数	文件大小	规格书
8页	461K
描述
TO-252

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TSD18N20M 数据手册

TSD18N20M

200V N-Channel MOSFET

General Description

Features

This Power MOSFET is produced using Truesemi‘s

• 18A,200V,Max.R_DS(on)=0.17 Ω @ V_GS=10V

• Low gate charge(typical 22nC)

• High ruggedness

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switched mode power supplies,

active power factor correction based on half bridge

topology.

Absolute Maximum Ratings

T_C=25℃ unless otherwise specified

Symbol

V_DSS

Parameter

Value

Units

Drain-Source Voltage

Gate-Source Voltage

200

V_GS

T_C= 25℃

T_C= 100℃

(Note 1)

(Note 2)

(Note 1)

18*

I_D

Drain Current

11.3*

72*

I_DM

I_AS

Pulsed Drain Current

Single Pulsed Avalanche Current

Single Pulsed Avalanche Energy

Repetitive Avalanche Energy

Repetitive Avalanche current

Power Dissipation (T_C= 25℃)

E_AS

453

E_AR

13.9

I_AR

P_D

℃

T_J, T_STG

Operating and Storage Temperature Range

-55 to +150

* Drain current limited by maximum junction temperature.

Thermal Resistance Characteristics

Symbol

Parameter

Typ

Max

1.79

Units

℃/W

R_θJC

Thermal Resistance,Junction-to-Case

Thermal Resistance,Junction-to-Ambient

R_θJA

Ver.B2

www.truesemi.com

12 3 4 5 6 7 8

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