Datasheet > TSC2411_1

TSC2411_1

更新时间： 2024-11-29 06:01:55

品牌	Logo	应用领域
TSC		晶体晶体管
页数	文件大小	规格书
4页	309K
描述
General Purpose NPN Transistor

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TSC2411_1 数据手册

TSC2411

General Purpose NPN Transistor

SOT-23

PRODUCT SUMMARY

Pin Definition:

1. Base

2. Emitter

BV_CEO

BV_CBO

I_C

40V

3. Collector

75V

600mA

V_CE(SAT)

0.5V @ I_C/ I_B= 380mA / 10mA

Features

Ordering Information

●

Driver Stage of AF Amplifier

General Purpose Switching Application

Part No.

Package

SOT-23

Packing

●

TSC2411CX RF

3Kpcs / 7” Reel

Structure

●

Epitaxial Planar Type

Complementary to TSA1036CX

●

Absolute Maximum Rating (Ta = 25^oC unless otherwise noted)

Parameter

Symbol

Limit

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

V_CBO

V_CEO

V_EBO

I_C

600

^oC

Collector Power Dissipation

Operating Junction Temperature

P_D

225

T_J

+150

- 55 to +150

Operating Junction and Storage Temperature Range

Note: 1. Single pulse, Pw=20ms, Duty≤50%

T_STG

^oC

2. When mounted on a 40 x 50 x 0.7mm ceramic board.

Electrical Specifications (Ta = 25^oC unless otherwise noted)

Parameter

Conditions

I_C= 10uA, I_E= 0

Symbol

BV_CBO

BV_CEO

BV_EBO

I_CBO

Min

Typ

Max

Unit

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage I_C= 10mA, I_B= 0

Emitter-Base Breakdown Voltage

Collector Cutoff Current

I_E= 10uA, I_C= 0

V_CB= 60V, I_E= 0

0.1

0.5

0.4

0.75

0.95

1.2

390

Emitter Cutoff Current

V_EB= 3V, I_C= 0

I_EBO

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

DC Current Transfer Ratio

I_C/ I_B= 380mA / 10mA

I_C/ I_B= 150mA / 15mA

I_C/ I_B= 500mA / 50mA

I_C/ I_B= 150mA / 15mA

I_C/ I_B= 500mA / 50mA

V_CE= 1V, I_C= 150mA

V_CE=5V, I_C=-20mA,

f=100MHz

V_CE(SAT)

V_BE(SAT)

h_FE

0.2

0.45

0.75

Transition Frequency

Output Capacitance

f_T

300

MHz

V_CB= 5V, f=1MHz

Cob

1/4

Version: A09

12 3 4

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