Datasheet > TSC2412CXT

TSC2412CXT

更新时间： 2024-11-28 22:34:31

品牌	Logo	应用领域
TSC		晶体晶体管
页数	文件大小	规格书
3页	45K
描述
General Purpose NPN Transistor

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中文翻译

获取价格

技术参数
数据手册

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TSC2412CXT 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.59
Is Samacsys：	N	Base Number Matches：	1

TSC2412CXT 数据手册

TSC2412

General Purpose NPN Transistor

BV_CEO= 50V

Pin assignment:

1. Base

2. Emitter

Ic = 150mA

V_{CE (SAT)}, = 0.2V(typ.) @Ic / Ib = 50mA / 5mA

3. Collector

Features

Ordering Information

ꢀ

Driver stage of AF amplifier_.

Part No.

Packing

Package Marking

ꢀ

General purpose switching application

TSC2412CX

3kpcs / Reel SOT-23

Structure

ꢀ

Epitaxial planar type.

ꢀ

Complementary to TSA1037CX

Absolute Maximum Rating (Ta = 25 ^oC unless otherwise noted)

Parameter

Symbol

Limit

60V

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

V_CBO

V_CEO

V_EBO

I_C

50V

Collector Current

150

^oC

Collector Power Dissipation

Operating Junction Temperature

P_D

225

T_J

+150

- 55 to +150

Operating Junction and Storage Temperature Range

Note: 1. Single pulse, Pw = 380uS, Duty <= 2%

T_STG

Electrical Characteristics

Ta = 25 ^oC unless otherwise noted

Parameter

Conditions

Symbol

Min

Typ

Max

Unit

Static

Collector-Base Voltage

I_C= 100uA, I_E= 0

I_C= 1mA, I_B= 0

BV_CBO

BV_CEO

BV_EBO

I_CBO

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cutoff Current

I_E= 50uA, I_C= 0

V_CB= 60V, I_E= 0

0.1

0.4

820

Emitter Cutoff Current

V_EB= 7V, I_C= 0

I_EBO

Collector-Emitter Saturation Voltage

DC Current Transfer Ratio

Transition Frequency

I_C/ I_B= 50mA / 5mA

V_CE= 6V, I_C= 1mA

V_CE=12V, I_C=2mA, f=100MHz

V_CB= 5V, f=1MHz

V_CE(SAT)1

h_FE

0.2

180

f_T

180

MHz

Output Capacitance

Cob

3.5

Note : pulse test: pulse width <=380uS, duty cycle <=2%

Classification Of h_FE

Rank

Range

180 - 390

270 – 560

410 - 820

Note: * is Typical

TSC2412

1-1

2003/12 rev. A

12 3

中文翻译

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