Datasheet > TSB1590_1

TSB1590_1

更新时间： 2024-11-27 06:02:39

品牌	Logo	应用领域
TSC		晶体晶体管
页数	文件大小	规格书
4页	266K
描述
Low Vcesat PNP Transistor

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中文翻译

获取价格

数据手册

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TSB1590_1 数据手册

TSB1590

Low Vcesat PNP Transistor

SOT-23

PRODUCT SUMMARY

Pin Definition:

1. Base

2. Emitter

BV_CBO

BV_CEO

I_C

-40V

3. Collector

-25V

-1A

V_CE(SAT)

-0.18V @ I_C/ I_B= -500mA / -50mA

Features

Ordering Information

●

Low V_CE(SAT)-0.4 @ I_C/ I_B= -150mA / -15mA

Complementary part with TSD2444

Part No.

Package

SOT-23

Packing

●

TSB1590CX RF

3Kpcs / 7” Reel

Structure

●

Epitaxial Planar Type

PNP Silicon Transistor

●

Absolute Maximum Rating (Ta = 25^oC unless otherwise noted)

Parameter

Symbol

Limit

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

V_CBO

V_CEO

V_EBO

I_C

-40

-25

-6

Collector Current

-1

Collector Power Dissipation

Thermal Resistance, Junction to Ambient

Operating Junction Temperature

P_D

225

^oC/W

^oC

Rθ_JA

556

T_J

+150

- 55 to +150

Operating Junction and Storage Temperature Range

T_STG

^oC

Note: Single pulse, Pw≤350us, Duty≤2%

Electrical Specifications (Ta = 25^oC unless otherwise noted)

Parameter

Conditions

Symbol

BV_CBO

BV_CEO

BV_EBO

I_CBO

Min

Typ

Max

Unit

Collector-Base Breakdown Voltage

I_C= -50uA, I_E= 0

-40

-25

-6

Collector-Emitter Breakdown Voltage I_C= -1mA, I_B= 0

Emitter-Base Breakdown Voltage

Collector Cutoff Current

I_E= -50uA, I_C= 0

V_CB= -35V, I_E= 0

-100

-0.4

-1.3

560

Emitter Cutoff Current

V_EB= -6V, I_C= 0

I_EBO

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

I_C/ I_B= -500mA / -50mA

V_CE= -3V, I_C= -100mA

V_CE= -3V, I_C= -800mA

V_CE=-5V, I_C=-50mA,

f=100MHz

*V_CE(SAT)

*V_BE(SAT)

-0.18

-0.9

*h_FE

120

DC Current Transfer Ratio

Transition Frequency

Output Capacitance

f_T

150

MHz

V_CB= -10V, f=1MHz

Cob

* Pulse Test: Pulse Width ≤380uS, Duty Cycle≤2%

1/1

Version: A09

12 3 4

中文翻译

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