Datasheet > TSA884

TSA884

更新时间： 2024-11-23 05:52:47

品牌	Logo	应用领域
TSC		晶体晶体管高压
页数	文件大小	规格书
4页	331K
描述
PNP Silicon Planar High Voltage Transistor

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TSA884 数据手册

TSA884

PNP Silicon Planar High Voltage Transistor

SOT-23

Pin Definition:

1. Emitter

PRODUCT SUMMARY

BV_CBO

BV_CEO

I_C

-500V

2. Base

3. Collector

-500V

-150mA

V_CE(SAT)

-0.5V @ I_C/ I_B= -50mA / -10mA

Features

Ordering Information

●

Low Saturation Voltages

Excellent gain characteristics specified up to -50mA

Part No.

Package

SOT-23

Packing

●

TSA884CX RF

3Kpcs / 7” Reel

Structure

●

Epitaxial Planar Type

PNP Silicon Transistor

●

Absolute Maximum Rating (Ta = 25^oC unless otherwise noted)

Parameter

Symbol

Limit

-500

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

V_CBO

V_CEO

V_EBO

-5

-150

Collector Current

I_C

Pulse

-500

Total Power Dissipation

P_tot

T_J

0.3

^oC

Operating Junction Temperature

+150

- 55 to +150

Operating Junction and Storage Temperature Range

T_STG

Electrical Specifications (Ta = 25^oC unless otherwise noted)

Parameter

Conditions

Symbol

BV_CBO

BV_CEO

BV_EBO

I_CBO

Min

Typ

Max

Unit

Collector-Base Breakdown Voltage

I_C= -100uA, I_E= 0

-500

-5

Collector-Emitter Breakdown Voltage I_C= -10mA, I_B= 0

Emitter-Base Breakdown Voltage

Collector Cutoff Current

I_E= -100uA, I_C= 0

V_CB= 120V, I_E= 0

-100

-0.2

-0.5

-0.9

300

Emitter Cutoff Current

V_EB= 6V, I_C= 0

I_EBO

I_C= -20mA, I_B= -2mA

I_C= -50mA, I_B= -10mA

V_CE= -10V, I_C= -50mA

V_CE= -10V, I_C= -1mA

V_CE= -10V, I_C= -50mA

V_CE= -10V, I_C= -100mA

V_CE=10V, I_C=-100mA

V_CB= 20V, f=1MHz

V_CE(SAT)

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Base-Emitter on Voltage

V_BE(SAT)

V_BE(ON)

h_FE

f_T

100

DC Current Transfer Ratio

Transition Frequency

Output Capacitance

Turn On Time

MHz

Cob

Ton

Toff

V_CE= -100V, I_C= -50mA

I_B1=-5mA, I_B2=-10mA

110

1500

Turn Off Time

1/4

Version: B08

12 3 4

中文翻译

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