Datasheet > TS9410VB

TS9410VB

更新时间： 2024-11-24 01:23:03

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	89K
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Specification of High Power IR Emitting Diode Chip

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TS9410VB 数据手册

TS9410VB

Vishay Semiconductors

www.vishay.com

Specification of High Power IR Emitting Diode Chip

FEATURES

• Package type: chip

• Package form: single chip

• Technology: surface emitter

• Dimensions chip (L x W x H in mm):

0.260 x 0.260 x 0.17

• Peak wavelength: λ = 940 nm

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912

DESCRIPTION

TS9410VB is a high power infrared, 940 nm surface emitting

diode in GaAlAs technology with high radiant power and

high speed. Polarity configuration is “n-up”.

GENERAL INFORMATION

The datasheet is based on Vishay optoelectronics sample testing under certain predetermined and assumed conditions, and is

provided for illustration purpose only. Customers are encouraged to perform testing in actual proposed packaged and used

conditions. Vishay optoelectronics die products are tested using Vishay optoelectronics based quality assurance procedures

and are manufactured using Vishay optoelectronics established processes. Estimates such as those described and set forth in

this datasheet for semiconductor die will vary depending on a number of packaging, handling, use, and other factors. Therefore

sold die may not perform on an equivalent basis to standard package products.

PRODUCT SUMMARY

COMPONENT

φ_e(mW)

ϕ (deg)

λ_p(nm)

t_r(ns)

TS9410VB

940

Note

•

Test condition see table “Basic Characteristics”

ORDERING INFORMATION

ORDERING CODE

PACKAGING

Wafer sawn on foil

REMARKS

MOQ: 385 000 pcs

PACKAGE FORM

TS9410VB-SF-F

Note

MOQ: minimum order quantity

Chip

•

ABSOLUTE MAXIMUM RATINGS (T_amb= 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

VALUE

100

UNIT

Forward current

I_F

Reverse voltage

V_R

Surge forward current

Junction temperature

Operating temperature range

Storage temperature range chip

Storage temperature range on foil

t_p/T = 0.1, t_p= 100 μs

I_FSM

T_j

500

°C

100

T_amb

T_stg1

T_stg2

-40 to +100

-40 to +110

-40 to +40

Rev. 1.2, 23-May-17

Document Number: 84291

For technical questions, contact: optochipsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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TS9410VB-SF-F	VISHAY	获取价格	Specification of High Power IR Emitting Diode Chip
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