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TS9414VB-SF-F

更新时间： 2024-11-24 01:23:03
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威世 - VISHAY /
页数 文件大小 规格书
4页 91K
描述
Specification of High Power IR Emitting Diode Chip

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TS9414VB  
Vishay Semiconductors  
www.vishay.com  
Specification of High Power IR Emitting Diode Chip  
FEATURES  
• Package type: chip  
• Package form: single chip  
• Technology: surface emitter  
• Dimensions chip (L x W x H in mm):  
0.355 x 0.355 x 0.17  
• Peak wavelength: λ = 940 nm  
• Material categorization:  
for definitions of compliance please see  
www.vishay.com/doc?99912  
DESCRIPTION  
TS9414VB is a high power infrared, 940 nm surface emitting  
diode in GaAlAs technology with high radiant power and  
high speed. Polarity configuration is “n-up”.  
GENERAL INFORMATION  
The datasheet is based on Vishay optoelectronics sample testing under certain predetermined and assumed conditions, and is  
provided for illustration purpose only. Customers are encouraged to perform testing in actual proposed packaged and used  
conditions. Vishay optoelectronics die products are tested using Vishay optoelectronics based quality assurance procedures  
and are manufactured using Vishay optoelectronics established processes. Estimates such as those described and set forth in  
this datasheet for semiconductor die will vary depending on a number of packaging, handling, use, and other factors. Therefore  
sold die may not perform on an equivalent basis to standard package products.  
PRODUCT SUMMARY  
COMPONENT  
φe (mW)  
ϕ (deg)  
λp (nm)  
tr (ns)  
TS9414VB  
40  
60  
940  
10  
Note  
•
Test condition see table “Basic Characteristics”  
ORDERING INFORMATION  
ORDERING CODE  
PACKAGING  
Wafer sawn on foil  
REMARKS  
MOQ: 220 000 pcs  
PACKAGE FORM  
TS9414VB-SF-F  
Note  
MOQ: minimum order quantity  
Chip  
•
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
SYMBOL  
VALUE  
100  
UNIT  
Forward current  
IF  
mA  
V
Reverse voltage  
VR  
5
Surge forward current  
Junction temperature  
Operating temperature range  
Storage temperature range chip  
Storage temperature range on foil  
tp/T = 0.1, tp = 100 μs  
IFSM  
Tj  
1
A
100  
°C  
°C  
°C  
°C  
Tamb  
Tstg1  
Tstg2  
-40 to +100  
-40 to +110  
-40 to +40  
Rev. 1.1, 11-Apr-17  
Document Number: 84275  
1
For technical questions, contact: optochipsupport@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
1234

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