Datasheet > TS13003CT

TS13003CT

更新时间： 2024-11-04 21:54:15

品牌	Logo	应用领域
TSC		晶体晶体管高压
页数	文件大小	规格书
3页	63K
描述
High Voltage NPN Transistor

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技术参数
数据手册

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TS13003CT 技术参数

生命周期：	Obsolete	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.54
Base Number Matches：	1

TS13003CT 数据手册

TS13003

High Voltage NPN Transistor

TO-126

BV_CEO= 400V

BV_CBO= 700V

Ic = 1.5A

Pin assignment:

1. Emitter

2. Collector

3. Emitter

V_{CE (SAT)}, = 0.8V @ Ic / Ib = 0.5A / 0.1A

Features

Ordering Information

High voltage_.

Part No.

TS13003CT

TS13003CK

Packing

Package

TO-92

TO-126

High speed switching

Bulk

Structure

Silicon triple diffused type.

NPN silicon transistor

Absolute Maximum Rating (Ta = 25 ^oC unless otherwise noted)

Parameter

Symbol

Limit

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

V_CBO

V_CEO

V_EBO

I_C

700V

400V

1.5

Pulse

TO-92

TO-126

0.6

Collector Power Dissipation

P_D

Operating Junction Temperature

T_J

+150

^oC

Operating Junction and Storage Temperature Range

Note: 1. Single pulse, Pw = 5mS, Duty <= 10%

T_STG

- 55 to +150

Electrical Characteristics

Ta = 25 ^oC unless otherwise noted

Parameter

Static

Conditions

Symbol

Min

Typ

Max

Unit

Collector-Base Voltage

I_C= 5mA, I_B= 0

I_C= 5mA, I_E= 0

BV_CBO

BV_CEO

BV_EBO

I_CBO

700

400

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cutoff Current

I_E= 1mA, I_C= 0

V_CB= 700V, I_E= 0

V_EB= 9V, I_C= 0

100

Emitter Cutoff Current

I_EBO

Collector-Emitter Saturation Voltage

I_C/ I_B= 1.5A / 0.5A

I_C/ I_B= 0.5A / 0.1A

V_CE= 2V, I_C= 0.5A

V_CE= 10V, I_C= 0.1A

V_CB= 10V, f = 0.1MHz

V_CE(SAT)1

V_CE(SAT)2

h_FE

0.5

DC Current Gain

Frequency

f_T

MHz

Output Capacitance

Turn On Time

Storage Time

Fall Time

Cob

_CC= 125V, I_C= 1A,

_B1= 0.2A, I_B2= - 0.2A,

R_L= 125ohm

t_ON

1.1

t_STG

t_f

0.7

Note : pulse test: pulse width <=5mS, duty cycle <=10%

TS13003

1-3

2003/12 rev. A

12 3

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