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TRS8E65H PDF预览

TRS8E65H

更新时间: 2024-11-25 14:57:19
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
7页 463K
描述
650 V/8 A SiC Schottky Barrier Diode, TO-220-2L

TRS8E65H 数据手册

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TRS8E65H  
SiC Schottky Barrier Diode  
TRS8E65H  
1. Applications  
Power Factor Correction  
Solar Inverters  
Uninterruptible Power Supplies  
DC-DC Converters  
2. Features  
(1) Chip design of 3rd generation  
(2) Low forward voltage : VF = 1.2 V (typ.)  
(3) Low total capacitive charge: Qc = 22 nC (typ.)  
(4) Low reverse current: IR = 1.5 µA (typ.)  
3. Packaging and Internal Circuit  
1: Cathode  
2: Anode  
TO-220-2L  
Start of commercial production  
2023-05  
©2023  
2023-04-11  
Rev.1.0  
1
Toshiba Electronic Devices & Storage Corporation  

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